Impact of strain relaxation on the growth rate of heteroepitaxial germanium tin binary alloy  

作　　者：Pedram Jahandar Maksym Myronov 

机构地区：[1]Department of Physics,University of Warwick,Coventry,CV47AL,United Kingdom

出　　处：《Journal of Semiconductors》2024年第10期35-41,共7页半导体学报（英文版）

摘　　要：The growth of high-quality germanium tin(Ge_(1–y)Sn_(y))binary alloys on a Si substrate using chemical vapor deposition(CVD)techniques holds immense potential for advancing electronics and optoelectronics applications,including the development of efficient and low-cost mid-infrared detectors and light sources.However,achieving precise control over the Sn concentration and strain relaxation of the Ge_(1–y)Sn_(y)epilayer,which directly influence its optical and electrical properties,remain a significant challenge.In this research,the effect of strain relaxation on the growth rate of Ge_(1–y)Sn_(y)epilayers,with Sn concentration>11at.%,is investigated.It is successfully demonstrated that the growth rate slows down by~55%due to strain relaxation after passing its critical thickness,which suggests a reduction in the incorporation of Ge into Ge_(1–y)Sn_(y)growing layers.Despite the increase in Sn concentration as a result of the decrease in the growth rate,it has been found that the Sn incorporation rate into Ge_(1–y)Sn_(y)growing layers has also decreased due to strain relaxation.Such valuable insights could offer a foundation for the development of innovative growth techniques aimed at achieving high-quality Ge_(1–y)Sn_(y)epilayers with tuned Sn concentration and strain relaxation.

关 键 词：GeSn germanium tin strain relaxation groupⅣsemiconductor chemical vapour deposition CVD 

分 类 号：TN304[电子电信—物理电子学]