100 mm×100 mm液相外延碲镉汞薄膜技术进展  

Progress in LPE Growth of HgCdTe Film at 100 mm×100 mm

作　　者：邓文斌 宋林伟[1] 孔金丞[1] 姜军[1] 杨晋 起文斌 万志远[1] 刘燕[1] 荣徽宇 许江明 杨翔 朱逊 郑要争 姬荣斌[1] DENG Wenbin;SONG Linwei;KONG Jincheng;JIANG Jun;YANG Jin;QI Wenbin;WAN Zhiyuan;LIU Yan;RONG Huiyu;XU Jiangming;YANG Xiang;ZHU Xun;ZHENG Yaozheng;JI Rongbin(Kunming Institute of Physics,Kunming 650223,China)

机构地区：[1]昆明物理研究所,云南昆明650223

出　　处：《红外技术》2024年第10期1172-1177,共6页Infrared Technology

摘　　要：昆明物理研究所突破了φ150 mm碲锌镉单晶定向生长技术,实现了100 mm×100 mm碲锌镉衬底的小批量制备,位错腐蚀坑密度(EPD)≤4×10^(4) cm^(-2),沉积相尺寸小于5μm、沉积相密度小于5×10^(3) cm^(-2)。突破了大尺寸碲锌镉衬底表面处理以及大面积富碲水平推舟液相外延技术,实现了100 mm×100 mm大尺寸短波、中波碲镉汞薄膜材料的制备,薄膜表面质量优异,厚度极差优于±1.25μm,组分极差优于±0.0031,是目前国际上报道的最大面积碲锌镉衬底基碲镉汞薄膜材料。该材料为10k×10k及以上亿像素规模红外探测器的研制、4k×4k等规模大面阵红外探测器的量产奠定了坚实的基础。The Kunming Institute of Physics has achieved significant advancements in the directional growth technology of φ150 mm cadmium zinc telluride(CZT)single crystals,thus enabling the small-scale production of 100 mm×100 mm CZT substrates.The dislocation etch pit density(EPD)is≤4×10^(4)cm^(-2),with precipitate dimensions of<5μm and a density of<5×10^(3)cm^(-2).In addition,100 mm×100 mm large-area mercury cadium telluride(MCT)thin films were successfully prepared via the surface treatment of large-sized CZT substrates and tellurium-rich horizontal sliding-boat liquid-phase epitaxy.These films exhibit excellent surface quality,with thickness variation within±1.25μm and compositional variation better than±0.0031.This achievement represents the largest area of CZT-based MCT thin films reported internationally and therefore provides a solid foundation for the development of 10 k×10k or larger-scale infrared detectors and the mass production of 4 k×4k scale infrared detector products.

关 键 词：液相外延 100mm×100mm 碲锌镉 碲镉汞 

分 类 号：TN215[电子电信—物理电子学]