GaAs基底上制备圆孔阵列光栅及其影响因素研究  

Research on fabrication of circular hole array grating on GaAs substrate and its influencing factors

作　　者：石铸 全保刚[2] 阚强[3] 胡放荣[1] SHI Zhu;QUAN Baogang;KAN Qiang;HU Fangrong(School of Electronic Engineering and Automation,Guilin University of Electronic Technology,Guilin 541004,China;Micromachining Laboratory,Institute of Physics,Chinese Academy of Sciences,Beijing 100083,China;Key Laboratory of Semiconductor Materials Science,Institute of Semiconductors,Chinese Academy of Sciences,Beijing 100083,China)

机构地区：[1]桂林电子科技大学电子工程与自动化学院,广西桂林541004 [2]中国科学院物理研究所微加工实验室,北京100083 [3]中国科学院半导体研究所材料重点实验室,北京100083

出　　处：《桂林电子科技大学学报》2024年第3期323-330,共8页Journal of Guilin University of Electronic Technology

基　　金：国家自然科学基金(62065005,62003107);广西自然科学基金(2018GXNSFAA050043,2020GXNSFDA238019,2020GXNSFBA238012)。

摘　　要：为解决半导体激光器的偏振问题,提出了一种利用泰尔博特位移光刻曝光技术在Ga As衬底上制作周期光栅的方法,并系统研究了工艺参数和抗反射层对制备的周期光栅质量的影响。利用二次光刻工艺和反应离子蚀刻工艺在Ga As衬底上制备圆孔阵列周期光栅;通过电感耦合等离子体蚀刻设备制造均匀光栅。实验结果表明,该工艺流程可制备深度为20~150 nm的动态可调圆孔阵列周期光栅;当曝光剂量为30 m J·cm^(-2),曝光光强度为2 m W·cm^(-2),显影时间为1 min时,所曝光出的周期光栅符合实验要求;重复实验证明了利用泰尔伯特位移光刻技术制备光栅工艺的可行性及稳定性。To solve the polarization problem of semiconductor laser,a method of fabricating periodic gratings on GaAs substrates by displacement Talbot lithography(DTL)exposure technology is proposed,and the influence of process parameters and anti-reflection layer on the quality of the exposed periodic gratings is systematically studied.The secondary photolithography process and the reactive ion etching process are used to prepare the circular hole array periodic grating on the GaAs substrate;the uniform grating is manufactured by inductively coupled plasma etching(ICP)equipment.Experimental results show that this process can prepare a dynamic adjustable circular hole array periodic grating with a depth of 20-150 nm;when the exposure dose is 30 mJ·cm^(-2),the exposure light intensity is 2 mW.cm-?,and the development time is 1 min,the exposed periodic grating meets the experimental requirements;Repeated experiments proved the feasibility and stability of using DTL to prepare the grating process.

关 键 词：泰尔伯特位移光刻曝光技术 光栅 反应离子蚀刻 电感耦合等离子蚀刻 半导体激光器 

分 类 号：O433.1[机械工程—光学工程]