Channel-bias-controlled reconfigurable silicon nanowire transistors via an asymmetric electrode contact strategy  

作　　者：Wentao Qian Junzhuan Wang Jun Xu Linwei Yu 

机构地区：[1]School of Electronic Science and Engineering/National Laboratory of Solid-State Microstructures,Nanjing University,Nanjing 210093,China

出　　处：《Chip》2024年第3期8-14,共7页芯片（英文）

基　　金：the financial supports received from the National Key Research Program of China under granted No.92164201;National Natural Science Foundation of China for Distinguished Young Scholars No.62325403;National Natural Science Foundation of China under Nos.62104100 and 61921005,and 61974064.

摘　　要：Reconfigurable field-effect transistors(R-FETs)that can dynamically reconfigure the transistor polarity,from n-type to p-type channel or vice versa,represent a promising new approach to reduce the logic complexity and granularity of programmable electronics.Although R-FETs have been successfully demonstrated upon silicon nanowire(SiNW)channels,a pair of extra program gates is still needed to control the source/drain(S/D)contacts.In this work,we propose a rather simple single gate R-FET structure with an asymmetric S/D electrode contact,where the FET channel polarity can be altered by changing the sign of channel bias V_(ds).These R-FETs were fabricated upon an orderly array of planar SiNW channels,grown via in-plane solid-liquid-solid mechanism,and contacted by Ti/Al and Pt/Au at the S/D electrodes,respectively.Remarkably,this channel-bias-controlled R-FET strategy has been successfully testified and implemented upon both p-typedoped(with indium dopants)or n-type-doped(phosphorus)SiNW channels,whereas the R-FET prototypes demonstrate an impressive high I_(on/off) ratio of>10^(6) and a steep subthreshold swing of 79 mV/dec.These results indicate a rather simple,compact and generic enough R-FET strategy for the construction of a new generation of SiNW-based programmable and low-power electronics.

关 键 词：CATALYTIC Si NANOWIRES ASYMMETRIC electrodes Reconfigure TRANSISTOR 

分 类 号：TN32[电子电信—物理电子学]