SnSe掺杂SnS薄膜的制备及热电性能研究  

Preparation and Thermoelectric Properties of SnSe-doped SnS Film

作　　者：赵康 张权辉 陈上峰 李美玲 田辉 孙乃坤[1] ZHAO Kang;ZHANG Quanhui;CHEN Shangfeng;LI Meiling;TIAN Hui;SUN Naikun(Shenyang Ligong University,Shenyang 110159,China)

机构地区：[1]沈阳理工大学理学院,沈阳110159

出　　处：《沈阳理工大学学报》2024年第6期61-66,共6页Journal of Shenyang Ligong University

基　　金：国家自然科学基金项目(52171187)。

摘　　要：硫族化合物SnS在光学及热电领域具有巨大的应用前景。为提高SnS的热电性能,采用化学气相沉积法在柔性云母基底上制备SnSe掺杂(原子分数分别为5%、10%、20%)的SnS基薄膜,使用扫描电子显微镜、X射线衍射仪、拉曼光谱仪和塞贝克系数测试系统研究掺杂浓度对薄膜的形貌和组成、晶体结构、光学和热电性能的影响。测试结果表明:所有样品均为正交相,随着掺杂量的增加,更多的Se原子取代晶格中的S原子,导致晶格常数增大;Se原子对S原子的替代导致Ag振动模式发生红移;室温下,10%SnSe掺杂的SnS薄膜功率因子相对最大,为0.018 mW/(m·K^(2)),相比SnS本体提高了5倍。The chalcogenide compound SnS has significant potential in optical and thermoelectric applications.In order to improve the thermoelectric properties of SnS,SnS-based thin film doped with SnSe(the atomic fractions are 5%,10%and 20%,respectively)was prepared on flexible mica substrates using chemical vapor deposition.The influence of doping concentration on the morpholo-gy and composition,crystal structure,optical,and thermoelectric properties of the film was system-atically studied using scanning electron microscopy,X-ray diffraction,Raman spectroscopy,and a Seebeck coefficient measurement system.The test results revealed that all samples possess an ortho-rhombic phase.With increased doping,more Se atoms replaced S atoms in the lattice,resulting in an enlargement of the lattice constants.The substitution of Se atoms for S atoms caused a redshift in the Ag vibrational mode.At room temperature,the SnS thin film with 10%SnSe doping exhibited the highest power factor of 0.018 mW/(m·K^(2)),which is a fivefold increase compared to the bulk material.

关 键 词：SNS 化学气相沉积 热电性能 功率因子 

分 类 号：O484.4[理学—固体物理]