极紫外光刻量产良率的保障:掩模版保护膜  

Ensuring the yield of mass production in extreme ultraviolet lithography:the pellicle for mask

作　　者：李笑然 李丰华 LI Xiaoran;LI Fenghua(Laboratory of Thin Film Optics,Shanghai Institute of Optics and Fine Mechanics,Chinese Academy of Sciences,Shanghai 201800,China)

机构地区：[1]中国科学院上海光学精密机械研究所薄膜光学实验室,上海201800

出　　处：《光学仪器》2024年第4期81-94,共14页Optical Instruments

摘　　要：当前信息技术的快速发展,需要不断扩大高端芯片的产能和良率,以满足当下及未来对电子产品持续增长的需求。在高端芯片制造环节中的极紫外光刻过程中,任何落在掩模版上的纳米尺度的颗粒污染,都会使曝光成像的图案产生缺陷而降低光刻制程的良率,最终导致芯片制造成本的激增。因此,通过在掩模版上安装“保护膜”这一物理屏障,可有效阻挡任何尺度的污染颗粒进入成像的焦平面内,避免其对极紫外曝光成像质量的不利影响,从而极大地提高芯片制造的良品率。本综述从极紫外光刻掩模版保护膜的材料选择、结构设计、保护膜的制备工艺,以及表征手段等方面进行了详细的介绍。本综述将为我国从事先进光刻以及自支撑薄膜器件研究的学者、工程师等提供有益的参考。With the rapid development of information technology,the production capacity and yield of high-end chips are continuously expanded,to meet the growing demands for electronics in the present and future.During the extreme ultraviolet(EUV)lithography processes to produce these high-end chips,nanoscale particles falling on the EUV mask will lead to imaging defects during exposure,reducing the production yield and eventually increasing the costs of chip manufacturing significantly.Therefore,the EUV pellicle,a physical barrier effectively blocking particles of any size entering the focal plane of imaging,can be installed on the EUV mask,to greatly improve the yield of chip manufacturing.A detailed introduction of EUV pellicles is provided in this review,including material selection,structural design,preparation processes,and film characterizations.This review provides insightful references for the scholars and engineers engaged in the domestic research on advanced lithography and self-supporting thin-film devices.

关 键 词：极紫外光刻 良品率 保护膜 透过率 自支撑 薄膜 

分 类 号：O484[理学—固体物理]