具有AlN钝化层的AlGaN/GaN HEMT热性能  

Study on the thermal performance of AlGaN/GaN HEMT with AlN passivation layer

作　　者：程识 李琦[1] 崔现文 叶健 管理 CHENG Shi;LI Qi;CUI Xianwen;YE Jian;GUAN Li(School of Information and Communication,Guilin University of Electronic Technology,Guilin 541004,China)

机构地区：[1]桂林电子科技大学信息与通信学院,广西桂林541004

出　　处：《桂林电子科技大学学报》2024年第2期181-189,共9页Journal of Guilin University of Electronic Technology

基　　金：国家自然科学基金(62064003)。

摘　　要：在现代电力电子和射频应用领域,AlGaN/GaN高电子迁移率晶体管(HEMTs)因其卓越的电性能和高功率密度而备受关注。然而,随着这些应用对功率密度的要求日益增长,AlGaN/GaN HEMT器件的热管理问题逐渐凸显,成为限制器件性能进一步提升的关键因素,尤其是在高功率条件下,自热效应会导致器件结温升高,从而影响器件的可靠性和寿命。因此,开发新的结构以优化AlGaN/GaN HEMT的热性能,对于推动这一技术的商业化应用具有重要意义。为提高AlGaN/GaN HEMT的热性能,描述了具有AlN/SiN钝化层的AlGaN/GaN HEMT器件的自热效应,使用半导体器件模拟工具TCAD进行模拟。由于在器件顶部引入了额外的AlN钝化层,因此比传统的只有SiN钝化的器件表现出更优异的热性能。讨论了不同的AlN厚度(0~10μm)对GaN HEMT性能的影响,结果表明,AlN厚度为5μm的器件表现出较好的性能。提出的AlN/SiN堆叠钝化HEMT晶格温度为477 K,而传统的SiN钝化HEMT晶格温度为578 K。并且分别对比了具有AlN/SiN钝化层的AlGaN/GaN HEMT器件与传统AlGaN/GaN HEMT器件的输出特性曲线、转移特性曲线、瞬态漏电流响应曲线以及增益-频率特性曲线。In the field of modern power electronics and RF applications,AlGaN/GaN High Electron Mobility Transistors(HEMTs)are highly valued for their outstanding electrical performance and high-power density.However,as demands for power density in these applications continue to grow,thermal management issues in AlGaN/GaN HEMT devices have become increasingly prominent,becoming a key factor limiting further performance enhancements,especially under high-power conditions where self-heating effects can lead to increased junction temperatures,thus affecting the reliability and lifespan of the devices.Therefore,developing new structures to optimize the thermal performance of AlGaN/GaN HEMTs is of significant importance for advancing the commercial application of this technology.Describes the self-heating effects of AlGaN/GaN HEMT devices with an AlN/SiN passivation layer,simulated using semiconductor device simulation tool(TCAD).The introduction of an additional AlN passivation layer on top of the device results in superior thermal performance compared to traditional devices with only a SiN passivation layer.The impact of different AlN thicknesses(from 0-10μm)on the performance of GaN HEMTs is discussed,and the results show that devices with a 5μm thick AlN layer exhibit better performance.This paper presents an AlN/SiN stacked passivation HEMT with a lattice temperature of 477 K,compared to 578 K for traditional SiN passivated HEMTs.It also compares the output characteristics,transfer characteristics,transient leakage current response curves,and gain-frequency characteristic curves of AlGaN/GaN HEMTs with an AlN/SiN passivation layer to those of traditional AlGaN/GaN HEMTs.

关 键 词：GaN HEMT 热特性 自热效应 TCAD 晶格温度 

分 类 号：TN386.2[电子电信—物理电子学]