中子辐照诱生锆钛酸铅厚膜界面缺陷  

Neutron irradiation related interfacial defects in lead zirconate titanate thick film

作　　者：彭茂洋 孟德超 傅正平[2] PENG Maoyang;MENG DechaomFU Zhengping(Microsystem and Terahertz Research Center,Institute of Electronic Engineering,China Academy of Engineering Physics,Mianyang 621999,China;College of Nanoscience and Technology,University of Science and Technology of China,Suzhou 215123,China)

机构地区：[1]中国工程物理研究院电子工程研究所微系统与太赫兹研究中心,绵阳621999 [2]中国科学技术大学纳米科学技术学院,苏州215123

出　　处：《辐射研究与辐射工艺学报》2024年第5期118-124,共7页Journal of Radiation Research and Radiation Processing

基　　金：核国重开放课题(NPT2023KFY10)。

摘　　要：采用中子对厚度为5μm的锆钛酸铅(PZT)压电厚膜进行辐照,选择注量为0 cm^(-2)、1011cm^(-2)、1012cm^(-2)、1013cm^(-2)。针对界面缺陷影响机制不清晰问题,应用深能级瞬态谱(DLTS)对样品的界面缺陷能级、浓度、俘获截面等关键性质进行了系统性表征。结果表明:1011cm^(-2)的中子辐照使PZT厚膜界面处缺陷激活能从0.9 eV增加到1.6 eV,是导致极化强度降低11.2%、介电常数下降以及漏电流增大的重要因素,且影响程度与辐照的注量呈正相关。该研究结果对于压电材料和器件在辐照环境应用有重要参考意义。In this paper,we focus on the neutron irradiation effect on lead zirconate titanate(PZT)piezoelectric thick film with a thickness of 5μm.The selected fluxes are at relatively low fluxes,including 4 kinds of 0 cm^(-2),1011 cm^(-2),1012 cm^(-2),1013 cm^(-2).The key properties of the samples have been systematically characterized,especially the interface defect(energy level,concentration,and capture cross-section)using deep level transient spectroscopy(DLTS).It benefits the throughout understanding of the role of interface defects on the overall properties of PZT a lot.The results showed that neutron irradiation at 1011 cm^(-2) increased the activation energy of interface defects in the PZT thick film from 0.9 eV to 1.6 eV.This is a significant factor leading to an 11.2%reduction in polarization intensity,a decrease in dielectric constant,and an increase in leakage current.The degree of impact is positively correlated with the irradiation fluence.The results of this study have important reference significance for the application of piezoelectric materials and devices in irradiated environments.

关 键 词：PZT厚膜 中子辐照 界面缺陷 电学性能 

分 类 号：TL11[核科学技术—核能科学]