硅多晶基磷检验中硼和碳的引入分析  

Analysis of Boron and Carbon Introduction in Silicon Poly-crystalline Base Phosphorus Test

作　　者：徐顺波 袁秋月 谢佳均 贾琳 吴麟 肖翔东 Xu Shunbo;Yuan Qiuyue;Xie Jiajun;Jia Lin;Wu Lin;Xiao Xiangdong(Sichuan Yongxiang New Energy Co.,Ltd.,Leshan 614000,China)

机构地区：[1]四川永祥新能源有限公司,四川乐山614000

出　　处：《云南化工》2024年第10期131-133,共3页Yunnan Chemical Technology

摘　　要：硅多晶作为超高纯半导体原材料,需要按照标准对其杂质进行检测,从而判定质量等级决定其最终用途。文章通过分析磷基制样过程中硼和碳杂质的情况,探讨了可能引入杂质的来源,并给出了控制建议以达到提高分析结果准确性的目的。Silicon Poly-crystals,as raw materials of ultra-high purity semiconductors,whether solar or electronic,needs to be detected and analyzed according to the standard,and then the impurity content can be used to determine the grade and the subsequent use.Because of the different grain orientations,the electrical parameters of poly-crystalline silicon can,t accurately reflect the inherent quality of the product.After testing the conductivity,resistivity and minority carrier life of silicon single crystal,the donor impurity,acceptor impurity,substitution carbon and interstitial oxygen were measured by spectral method.Sampling,pickling and drawing are needed in the process of transforming polysilicon into monocrystalline,and the sections of silicon wafers need to be sliced,plate preparation requires slicing,grinding and polishing of silicon wafer sections.In this paper,the sources of boron and carbon impurities in the preparation process are analyzed,and the possible factors are analyzed.

关 键 词：硅多晶 样芯 硅单晶 硼 碳 分析 

分 类 号：O613[理学—无机化学] TN304[理学—化学]