小间距下光刻孔孔径对铟凸点阵列制备的影响  

Effect of Lithography Aperture on the Preparation of Indium Bump Arrays at Small Pitch

作　　者：陈辉[1] 杨天溪 蒋冰鑫 张文靖 兰金华 黄忠航 孙捷 严群 CHEN Hui;YANG Tianxi;JIANG Bingxin;ZHANG Wenjing;LAN Jinhua;HUANG Zhonghang;SUN Jie;YAN Qun(National and Local United Engineering Laboratory of Flat Panel Display Technology,Fuzhou University,and Fujian Science and Technology Innovation Laboratory for Optoelectronic Information of China,Fuzhou 350100,CHN;Fujian Science and Technology Innovation Laboratory for Optoelectronic Information of China,Fuzhou 350100,CHN;Quantum Device Physics Laboratory,Chalmers University of Technology,Göteborg 41296,Sweden)

机构地区：[1]福州大学,平板显示技术国家地方联合工程实验室,中国福建光电信息科学与技术创新实验室,福州350100 [2]中国福建光电信息科学与技术创新实验室,福州350100 [3]瑞典查尔摩斯理工大学,量子器件物理实验室,哥德堡41296

出　　处：《光电子技术》2024年第3期190-194,共5页Optoelectronic Technology

基　　金：国家重点研发计划(2023YFB3608700、2023YFB3608703);闽都创新实验室项目(2021ZZ122、2020ZZ110);福建省科技厅项目(2021HZ0114、2021J01583)。

摘　　要：小间距下制备铟凸点阵列时,常出现铟凸点高度较低、均匀性较差的情况。文中研究了小间距条件下热蒸镀过程中光刻工艺所形成的光刻胶孔径对于铟凸点沉积质量所带来的影响,并选取了合适的光刻和蒸镀参数,在8μm间距的Micro-LED芯片上成功制备了高度为4μm的铟凸点阵列。实验表明,铟凸点的高度随光刻过程中形成的光刻胶孔径的增大而增大,增长率随之降低。在5μm大小的光刻胶孔径下制备得到的铟凸点阵列高度较高且均匀性较好。When preparing indium bump arrays at small spacing,the indium bump height is low and the uniformity is poor.In this paper,the influence of the photoresist aperture formed by the photolithography process during hot evaporation under the condition of small pitch on the quality of indium bump deposition was studied,and the indium bump array with a height of 4μm was successfully prepared on a Micro-LED chip with a pitch of 8μm by selecting appropriate lithography and evaporation parameters.Experiments showed that the height of the indium bump increased with the increase of the aperture of the photoresist formed during the lithography process,and the growth rate decreased accordingly.The indium bump arrays prepared under the photoresist aperture of 5μm were of high height and great uniformity.

关 键 词：小间距 铟凸点 孔径 微缩矩阵化发光二极管 

分 类 号：TN312.8[电子电信—物理电子学]