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作 者:Bochen Lu Yuxuan Yang Yang Zhang Rong Qin Xinlu Xue Jinyue Peng Haijun Wu
机构地区:[1]State Key Laboratory for Mechanical Behavior of Materials Electronic Materials Research Laboratory(Key Lab of Education Ministry)and School of Electronic and Information Engineering Xi’an Jiaotong University,710049,Xi’an,P.R.China [2]Qinghai Xince Technology Co.,Ltd.Huanghe Hydropower Development Co.,Ltd.,810007,Xining,P.R.China [3]Instrumental Analysis Center Xi’an Jiaotong University,Xi’an,P.R.China
出 处:《Journal of Advanced Dielectrics》2024年第3期11-17,共7页先进电介质学报(英文)
基 金:support of the unveiling project of“Application Research on Carbon and Other Trace Impurities and Microstructure Characterization Technology on the Surface of Electronic Grade Polysilicon”by Qinghai Xince Technology Co.,Ltd.of the Huanghe Hydropower Development Co.,Ltd.,project number:XCKJ-FY(2024)No.1(total No.25).
摘 要:This paper focuses on the problems encountered in the production process of electronic-grade polycrystalline silicon.It points out that the characterization of electronic-grade polycrystalline silicon is mainly concentrated at the macroscopic scale,with relatively less research at the mesoscopic and microscopic scales.Therefore,we utilize the method of physical polishing to obtain polysilicon characterization samples and then the paper utilizes metallographic microscopy,scanning electron microscopy-electron backscatter diffraction technology,and aberration-corrected transmission electron microscopy technology to observe and characterize the interface region between silicon core and matrix in the deposition process of electronic-grade polycrystalline silicon,providing a full-scale characterization of the interface morphology,grain structure,and orientation distribution from macro to micro.Finally,the paper illustrates the current uncertainties regarding polycrystalline silicon.
关 键 词:POLYSILICON silicon core MATRIX INTERFACE metallographic microscopy EBSD
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