funded by the Natural Science Foundation Projects in Sichuan Province(No.2022NSFSC0254).
The modified Siemens method is the dominant process for the production of polysilicon,yet it is characterised by high energy consumption.Two models of laboratory-grade Siemens reduction furnace and 12 pairs of rods in...
support received from the School of Electrical Engineering&Telecommunications(EE)and UNSW Sydney.
Low-thermal-budget,electrically active,and thick polysilicon films are necessary for building a microelectromechanical system(MEMS)on top of a complementary metal oxide semiconductor(CMOS).However,the formation of the...
support of the unveiling project of“Application Research on Carbon and Other Trace Impurities and Microstructure Characterization Technology on the Surface of Electronic Grade Polysilicon”by Qinghai Xince Technology Co.,Ltd.of the Huanghe Hydropower Development Co.,Ltd.,project number:XCKJ-FY(2024)No.1(total No.25).
This paper focuses on the problems encountered in the production process of electronic-grade polycrystalline silicon.It points out that the characterization of electronic-grade polycrystalline silicon is mainly concen...
support from the unveiling project by Qinghai Xince Technology Co.,Ltd.,Huanghe Hydropower Development Co.,Ltd.,Project No.XCKJ-FY(2024)No.1(total No.25).
Large-size electronic-grade polycrystalline silicon is an important material in the semiconductor industry with broad application prospects.However,electronic-grade polycrystalline silicon has extremely high requireme...
support by the Science and Technology Planning Project of the Science and Technology Department of Yunnan Province (grant No.202002AB080002 and 202202AB080014).
Operating conditions strongly affect the yield and quality of polysilicon in a polysilicon fluidized bed.In this study,a new model of polysilicon fluidized bed was established using the Euler-Euler model coupled with ...
Project supported in part by the Science Foundation for Distinguished Young Scholars of Shaanxi Province,China(Grant No.2018JC-017);111 Project(Grant No.B12026)。
A novel silicon carbide gate-controlled bipolar field effect composite transistor with poly silicon region(SiC GCBTP)is proposed.Different from the traditional electrode connection mode of SiC vertical diffused MOS(VD...
Based on the electrical monitoring parameter analysis, physical failure (hot spot) analysis and yield graphics and process characteristics, suspect the subthreshold leakage of kernel device (Core Device) and static re...
Smart materials and structures, especially those bio-inspired, are often characterized by a hierarchy of length- and time-scales. Smart Micro Electro-Mechanical Systems (MEMS) are als...
In this study,we present an organic field-effect transistor floating-gate memory using polysilicon(poly-Si)as a charge trapping layer.The memory device is fabricated on a N^+-Si/SiO2 substrate.Poly-Si,polymethylmethac...
In this study, a continuous and airtight twin-spiral dryer was developed in accordance with the characteristics and challenges in the process of disposing polysilicon slurry. Computational fluid dynamics (CFD) simulat...