FLOATING-GATE

作品数：13被引量：15H指数：3
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相关领域：电子电信自动化与计算机技术更多>>
相关期刊：《Science China Materials》《InfoMat》《Chinese Physics B》《Science Bulletin》更多>>
相关基金：国家自然科学基金国家重点基础研究发展计划中国博士后科学基金更多>>
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Tailoring lithium intercalation pathway in 2D van der Waals heterostructure for high-speed edge-contacted floating-gate transistor and artificial synapses
《InfoMat》2024年第10期53-64,共12页Jun Yu Jiawei Fu Hongcheng Ruan Han Wang Yimeng Yu Jinpeng Wang Yuhui He Jinsong Wu Fuwei Zhuge Ying Ma Tianyou Zhai 
National Key Research and Development Program of China,Grant/Award Number:2023YFB4502200;National Natural Science Foundation of China,Grant/Award Numbers:52372149,U21A2069;Innovation Project of Optics Valley Laboratory,Grant/Award Number:OVL2023PY007;Guangdong HUST Industrial Technology Research Institute,Guangdong Provincial Key Laboratory of Manufacturing Equipment Digitization,Grant/Award Number:2023B1212060012;Interdiciplinary Research Program of HUST,Grant/Award Number:2024JCYJ008。
Local phase transition in transition metal dichalcogenides (TMDCs) by lithiumintercalation enables the fabrication of high-quality contact interfaces in twodimensional(2D) electronic devices. However, controlling the ...
关键词：2D vdW heterostructure high-speed floating-gate transistor interlayer lithium intercalation engineering phase-engineered contact 
High-performance floating-gate organic phototransistors based on n-type core-expanded naphthalene diimides
《Chinese Chemical Letters》2023年第3期465-468,共4页Xianrong Gu Yang Qin Su Sun Lidan Guo Xiangwei Zhu Xiangnan Sun 
supported financially by the Ministry of Science and Technology of the People's Republic of China(No.2017YFA0206600);the National Natural Science Foundation of China(Nos.52050171,51822301,22175047,52103203,and 91963126);the CAS Instrument Development Project(No.YJKYYQ20170037);the Strategic Priority Research Program of the Chinese Academy of Sciences(No.XDB36020000);the CAS Pioneer Hundred Talents Program;the Natural Science Foundation of Shandong Province(No.ZR2020ME070);China Postdoctoral Science Foundation(No.2021M690802)。
In the field of organic phototransistor, achieving both broad-spectral and high photosensitivity has always been a big challenge. The innovation of device structure has previously proven to be a possible solution to t...
关键词：Organic phototransistor Bulk heterojunction n-Type small molecule Broad spectral photoresponse Weak light irradiation 
Floating-gate based PN blending optoelectronic synaptic transistor for neural machine translation被引量：1
《Science China Materials》2022年第5期1383-1390,共8页Xianghong Zhang Enlong Li Rengjian Yu Lihua He Weijie Yu Huipeng Chen Tailiang Guo 
supported by the National Natural Science Foundation of China (61974029);the Natural Science Foundation for Distinguished Young Scholars of Fujian Province (2020J06012);Fujian Science & Technology Innovation Laboratory for Optoelectronic Information of China (2021ZZ129)。
Neural machine translation, which has an encoder-decoder framework, is considered to be a feasible way for future machine translation. Nevertheless, with the fusion of multiple languages and the continuous emergence o...
关键词：optoelectronic transistor synaptic transistor synaptic plasticity modulation neural machine translation decoder 
Tactile tribotronic reconfigurable p-n junctions for artificial synapses被引量：5
《Science Bulletin》2022年第8期803-812,M0003,共11页Mengmeng Jia Pengwen Guo Wei Wang Aifang Yu Yufei Zhang Zhong Lin Wang Junyi Zhai 
supported by the National Natural Science Foundation of China(51872031,52073032,and 61904013);the Fundamental Research Funds for the Central Universities。
The emulation of biological synapses with learning and memory functions and versatile plasticity is significantly promising for neuromorphic computing systems.Here,a robust and continuously adjustable mechanoplastic s...
关键词：Reconfigurable p-n junction Semifloating-gate transistor Triboelectric potential Artificial synapses Synaptic plasticity 
Floating-gate photosensitive synaptic transistors with tunable functions for neuromorphic computing被引量：4
《Science China Materials》2021年第5期1219-1229,共11页Lingkai Li Xiao-Lin Wang Junxiang Pei Wen-Jun Liu Xiaohan Wu David Wei Zhang Shi-Jin Ding 
supported by the National Natural Science Foundation of China (61874029)。
Synaptic devices that merge memory and processing functions into one unit have broad application potentials in neuromorphic computing, soft robots, and humanmachine interfaces. However, most previously reported synapt...
关键词：synaptic device floating-gate transistor perovskite quantum dot tunable synaptic function optical and electrical comodulation 
Organic field-effect transistor floating-gate memory using polysilicon as charge trapping layer
《Chinese Physics B》2019年第8期282-286,共5页Wen-Ting Zhang Fen-Xia Wang Yu-Miao Li Xiao-Xing Guo Jian-Hong Yang 
In this study,we present an organic field-effect transistor floating-gate memory using polysilicon(poly-Si)as a charge trapping layer.The memory device is fabricated on a N^+-Si/SiO2 substrate.Poly-Si,polymethylmethac...
关键词：organic FLOATING-GATE MEMORY POLYSILICON FLOATING-GATE MEMORY WINDOW 
Heavy ion induced upset errors in 90-nm 64 Mb NOR-type floating-gate Flash memory被引量：5
《Chinese Physics B》2018年第9期615-619,共5页Jin-Shun Bi Kai Xi Bo Li Hai-Bin Wang Lan-Long Ji Jin Lil and Ming Liu 
Project supported by the National Natural Science Foundation of China(Grant No.616340084);the Youth Innovation Promotion Association of CAS(Grant No.2014101);the International Cooperation Project of CAS;the Austrian-Chinese Cooperative R&D Projects(Grant No.172511KYSB20150006)
Upset errors in 90-nm 64 Mb NOR-type floating-gate Flash memory induced by accelerated ^（129）Xe and ^（209）Bi ions are investigated in detail. The linear energy transfer covers the range from 50 to 99.8 Me V/（mg/c...
关键词：heavy ion Flash memory single event upset annealing 
Analysis of 3D NAND technologies and comparison between charge-trap-based and floating-gate-based flash devices
《The Journal of China Universities of Posts and Telecommunications》2017年第3期75-82,96,共9页Liu Shijun Zou Xuecheng 
NAND flash chips have been innovated from two-dimension （2D） design which is based on planar NAND cells to three-dimension （3D） design which is based on vertical NAND cells. Two types of NAND flash technologies-ch...
关键词：3D NAND flash charge trap floating gate 
NP-Domino, Ultra-Low-Voltage, High-Speed, Dual-Rail, CMOS NOR Gates
《Circuits and Systems》2016年第8期1916-1926,共11页Ali Dadashi Omid Mirmotahari Yngvar Berg 
In this paper, novel ultra low voltage (ULV) dual-rail NOR gates are presented which use the semi-floating-gate (SFG) structure to speed up the logic circuit. Higher speed in the lower supply voltages and robustness a...
关键词：Ultra Low Voltage (ULV) Semi-Floating-Gate (SFG) Speed NOR Gate Monte Carlo TSMC 90 nm CMOS 
Reliability of High Speed Ultra Low Voltage Differential CMOS Logic
《Circuits and Systems》2015年第5期121-135,共15页Omid Mirmotahari Yngvar Berg 
In this paper, we present a solution to the ultra low voltage inverter by adding a keeper transistor in order to make the semi-floating-gate more stable and to reduce the current dissipation. Moreover, we also present...
关键词：CMOS DIFFERENTIAL FLOATING-GATE Semi-Floating-Gate KEEPER RECHARGE ULTRA Low Voltage High Speed Monte-Carlo CADENCE STM 90 nm 
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