Organic field-effect transistor floating-gate memory using polysilicon as charge trapping layer  

作　　者：Wen-Ting Zhang Fen-Xia Wang Yu-Miao Li Xiao-Xing Guo Jian-Hong Yang 张文婷;王粉霞;李玉苗;郭小星;杨建红(Institute of Microelectronics,Lanzhou University,Lanzhou 730000,China;School of Electronic and Information Engineering,Lanzhou Jiaotong University,Lanzhou 730070,China)

机构地区：[1]Institute of Microelectronics,Lanzhou University,Lanzhou 730000,China [2]School of Electronic and Information Engineering,Lanzhou Jiaotong University,Lanzhou 730070,China

出　　处：《Chinese Physics B》2019年第8期282-286,共5页中国物理B（英文版）

摘　　要：In this study,we present an organic field-effect transistor floating-gate memory using polysilicon(poly-Si)as a charge trapping layer.The memory device is fabricated on a N^+-Si/SiO2 substrate.Poly-Si,polymethylmethacrylate,and pentacene are used as a floating-gate layer,tunneling layer,and active layer,respectively.The device shows bidirectional storage characteristics under the action of programming/erasing(P/E)operation due to the supplied electrons and holes in the channel and the bidirectional charge trapping characteristic of the poly-Si floating-gate.The carrier mobility and switching current ratio(Ion/Ioff ratio)of the device with a tunneling layer thickness of 85 nm are 0.01 cm^2·V^-1·s^-1 and 102,respectively.A large memory window of 9.28 V can be obtained under a P/E voltage of±60 V.In this study, we present an organic field-effect transistor floating-gate memory using polysilicon（poly-Si） as a charge trapping layer. The memory device is fabricated on a N+–Si/SiO2 substrate. Poly-Si, polymethylmethacrylate, and pentacene are used as a floating-gate layer, tunneling layer, and active layer, respectively. The device shows bidirectional storage characteristics under the action of programming/erasing（P/E） operation due to the supplied electrons and holes in the channel and the bidirectional charge trapping characteristic of the poly-Si floating-gate. The carrier mobility and switching current ratio（Ion/Ioff ratio） of the device with a tunneling layer thickness of 85 nm are 0.01 cm2·V-1·s-1 and 102, respectively. A large memory window of 9.28 V can be obtained under a P/E voltage of ±60 V.

关 键 词：organic FLOATING-GATE MEMORY POLYSILICON FLOATING-GATE MEMORY WINDOW 

分 类 号：O4[理学—物理]