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作 者:Omid Mirmotahari Yngvar Berg
机构地区:[1]Nanoelectronics System Group, Department of Informatics, Universisty of Oslo, Oslo, Norway [2]Department of Micro- and Nanosystems Technology, Buskerud & Vestfold University College, Horten, Norway
出 处:《Circuits and Systems》2015年第5期121-135,共15页电路与系统(英文)
摘 要:In this paper, we present a solution to the ultra low voltage inverter by adding a keeper transistor in order to make the semi-floating-gate more stable and to reduce the current dissipation. Moreover, we also present a differential ULV inverter and elaborate on the reliability and fault tolerance of the gate. The differential ULV gate compared to both a former ULV gate and standard CMOS are given. The results are obtained through Monte-Carlo simulations.In this paper, we present a solution to the ultra low voltage inverter by adding a keeper transistor in order to make the semi-floating-gate more stable and to reduce the current dissipation. Moreover, we also present a differential ULV inverter and elaborate on the reliability and fault tolerance of the gate. The differential ULV gate compared to both a former ULV gate and standard CMOS are given. The results are obtained through Monte-Carlo simulations.
关 键 词:CMOS DIFFERENTIAL FLOATING-GATE Semi-Floating-Gate KEEPER RECHARGE ULTRA Low Voltage High Speed Monte-Carlo CADENCE STM 90 nm
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