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作 者:Jinyue Peng Yuxuan Yang Yang Zhang Xinlu Xue Bochen Lu Rong Qin Haijun Wu
机构地区:[1]State Key Laboratory for Mechanical Behavior of Materials Electronic Materials Research Laboratory(Key Lab of Education Ministry)and School of Electronic and Information Engineering,Xi’an Jiaotong University 710049 Xi’an,China [2]Qinghai Xince Technology Co.,Ltd.,Huanghe Hydropower Development Co.,Ltd.,810007 Xining,China [3]Instrumental Analysis Center,Xi’an Jiaotong University,Xi’an,China
出 处:《Journal of Advanced Dielectrics》2024年第3期18-26,共9页先进电介质学报(英文)
基 金:support from the unveiling project by Qinghai Xince Technology Co.,Ltd.,Huanghe Hydropower Development Co.,Ltd.,Project No.XCKJ-FY(2024)No.1(total No.25).
摘 要:Large-size electronic-grade polycrystalline silicon is an important material in the semiconductor industry with broad application prospects.However,electronic-grade polycrystalline silicon has extremely high requirements for production technology and currently faces challenges such as carbon impurity breakdown,microstructure and composition nonuniformity and a lack of methods for preparing large-size mirror-like polycrystalline silicon samples.This paper innovatively uses physical methods such as wire cutting,mechanical grinding and ion thinning polishing to prepare large-size polycrystalline silicon samples that are clean,smooth,free from wear and have clear crystal defects.The material was characterized at both macroscopic and microscopic levels using metallographic microscopy,scanning electron microscopy(SEM)with backscattered electron diffraction(EBSD)techniques and scanning transmission electron microscopy(STEM).The crystal structure changes from single crystal silicon core to the surface of the bulk in the large-size polycrystalline silicon samples were revealed,providing a technical basis for optimizing and improving production processes.
关 键 词:POLYSILICON silicon core matrix interface SURFACE metallographic microscopy EBSD
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