基于锑化铟合成及区熔的热场研究  

Research on Thermal Field Based on Synthesis and Zone Melting of InSb

作　　者：靳丽岩 唐娟娟 王毅 李早阳 JIN Li-yan;TANG Juan-juan;WANG Yi;LI Zao-yang(The 2th Research Institute of CETC,Taiyuan 030024,China;Xian Jiaotong University,Xian 710049,China)

机构地区：[1]中国电子科技集团公司第二研究所,山西太原030024 [2]西安交通大学,陕西西安710049

出　　处：《红外》2024年第10期21-29,共9页Infrared

基　　金：装发项目(2006XX0003)。

摘　　要：为了适应中波红外探测器的发展对锑化铟(InSb)材料的需求,以InSb合成及区熔设备为研究对象,开展了InSb合成及区熔的热场研究。针对两步工艺研究了组合式热场结构,采用有限元仿真分析方法对热场进行数值模拟计算,得到了适宜工艺的温度分布及规律。经过工艺实验,晶锭出现3~10 cm的熔化区域,获得了载流子浓度和迁移率满足要求的N型InSb锭条。研究的组合式及三段熔区的热场结构有效提高了材料制备的效率,降低了制造成本。研究结果表明,合成及区熔设备温度场分布符合设计要求。仿真结果为此类设备的优化与改进提供了理论依据和有效手段,为红外探测器的发展提供了材料制备基础。In order to meet the demand for InSb materials in the development of mid-wave infrared detectors,InSb synthesis and zone-melting equipment is taken as the research object,and the thermal field of InSb synthesis and zone-melting is studied in this paper.The structure of the combined thermal field is studied for the two-step process,and the thermal field is numerically simulated by the finite element simulation analysis method.The temperature distribution and law suitable for the process are obtained.After the process experiment,the melting zone of 3-10 cm appears in the ingot,and the N-type InSb ingot with carrier concentration and mobility meeting the requirements is obtained.The combined and three-stage thermal field structure effectively improves the efficiency of material preparation and reduces the manufacturing cost.The results show that the temperature field distribution of synthesis and zone melting equipment meets the design requirements.The simulation results provide a theoretical basis and effective means for the optimization and improvement of such equipment,and provide a material preparation basis for the development of infrared detectors.

关 键 词：锑化铟 有限元分析 合成 区熔提纯 热场 

分 类 号：TN305[电子电信—物理电子学]