BCD工艺在高压功率驱动电路中的应用  

Application of BCD Process in High-Voltage Power Drive Circuits

作　　者：吴会利 林雨佳 孔祥旭 宋博尊 WU Huili;LIN Yujia;KONG Xiangxu;SONG Bozun(The 47th Institute of China Electronics Technology Group Corporation,Shenyang 110000,China;Beijing Shougang Automation Information Technology Co.,Ltd.,Beijing 710600,China)

机构地区：[1]中国电子科技集团公司第四十七研究所,沈阳110000 [2]北京首钢自动化信息技术有限公司,北京100000

出　　处：《微处理机》2024年第5期54-56,60,共4页Microprocessors

摘　　要：随着集成电路技术的快速发展,高压功率驱动电路在工业和汽车电子等领域得到广泛应用。为深入理解、开发和掌握先进BCD工艺技术,更好发挥其兼容Bipolar、CMOS和DMOS工艺的优势,通过介绍BCD工艺的特点及其发展历程,结合600 V高压功率驱动电路的设计,对隔离、高压MOS和版图设计等关键技术展开深入研究。研究可为高压功率驱动电路的设计实现提供有效支持,在当前芯片国产化大趋势下,对提升中国集成电路设计制造水平具有重要意义。With the rapid development of IC technology,high-voltage power drive cir cuits have been widely applied in fields such as industrial and automotive electronics.To deeply understand,develop,and master advanced BCD process technology,and to better leverage its advantages in integrating Bipolar,CMOS,and DMOS processes,this paper introduces the characteristics and development history of the BCD process.Combined with the design of 600 V high-voltage power drive circuits,it conducts in-depth research on key technologies including isolation,high-voltage MOS,and layout design.This research can provide effective support for the design and implementation of high-voltage power drive circuits.In the current trend of chip localization in China,it holds significant importance for enhancing the country's integrated circuit design and manufacturing capabilities.

关 键 词：BCD工艺 隔离技术 电压转换 功率驱动电路 兼容性 闩锁效应 叉指结构 多晶硅栅 

分 类 号：TN43[电子电信—微电子学与固体电子学]