硅/硅低温直接键合的工艺调控及应用  

Process Control and Application of Low-Temperature Si/Si Direct Bonding

作　　者：李东玲[1,2] 兰芬芬 崔笑寒 LI Dongling;LAN Fenfen;CUI Xiaohan(Key Laboratory of Optoelectronic Technology and System of the Education Ministry of China,Chongqing University,Chongqing 400030,China;National Defense Key Discipline Laboratory of Novel Micro/Nano Device and System Technology,Chongqing University,Chongqing 400030,China)

机构地区：[1]重庆大学光电技术及系统教育部重点实验室,重庆400030 [2]重庆大学新型微纳器件与系统技术国防重点学科实验室,重庆400030

出　　处：《传感技术学报》2024年第10期1674-1680,共7页Chinese Journal of Sensors and Actuators

基　　金：国家自然科学基金项目(61804016);成都市重点研发支撑计划项目(2023-YF11-00063-HZ);重庆大学仪器设备功能开发项目(gnkf2022012)。

摘　　要：为了满足微机电系统(MEMS)对高强度、低成本、灵活性好、通用性强硅/硅低温直接键合技术的迫切需求,开展基于氧等离子活化的硅/硅低温直接键合工艺调控方法及应用研究。通过正交实验分析了活化功率、活化时间、氧气流量对键合率和键合强度的影响,优化了氧等离子活化工艺,350℃氮气保护下退火2 h后,键合率为98.52%,平均抗剪切强度为20.2 MPa,键合界面连续无空洞,且形成了3.58 nm的非晶氧化层,表明实现了分子间的键合。最后,采用三层低温硅/硅键合工艺实现了微型振动能量收集器的限幅封装,成功将能量收集器的频带拓展到215 Hz~229 Hz。结果表明,该硅/硅键合工艺满足MEMS器件的加工及使用要求,其工艺调控方法具有较好的通用性。In order to meet the urgent need of micro-electromechanical systems(MEMS)for low-temperature Si/Si wafer bonding with high strength,low cost,good flexibility and strong universality,the process control method and application of low temperature Si/Si wafer direct bonding based on oxygen plasma activation are studied.The effects of oxygen plasma activation power,activation time and oxygen flow rate on bonding rate and bonding strength are analyzed through orthogonal experiment,and the plasma activation process is optimized.The bonding rate of Si/Si bonding is 98.52%and the average shear strength is 20.2 MPa after annealing at 350℃for 2 hours in nitrogen atmosphere.There are no obvious holes at the bonding interface,and a 3.58nm amorphous oxide layer is observed,meaning that intermolecular bonding is achieved between two Si wafers.Finally,the limiting encapsulation of the miniature vibration energy harvester is fabricated through three-layer low temperature Si/Si bonding process.The testing results show that the frequency band of the energy harvester is extended to 215 Hz~229 Hz,indicating that this Si/Si bonding process could meet the requirements of processing and application of MEMS devices.

关 键 词：氧等离子体 直接键合 正交实验 界面特性 频带拓展 

分 类 号：TN304[电子电信—物理电子学]