考虑阈值电压漂移的SiC MOSFET功率循环寿命修正技术  

Power Cycling Lifetime Correction Technique for SiC MOSFET Considering Threshold Voltage Drift

作　　者：顾殿杰 谢露红 邓二平 吴立信 刘昊 黄永章 Gu Dianjie;Xie Luhong;Deng Erping;Wu Lixin;Liu Hao;Huang Yongzhang(State Key Laboratory of Alternate Electrical Power System with Renewable Energy Sources(North China Electric Power University),Beijing 102206,China;State Key Laboratory of High-Efficiency and High-Quality Conversion for Electric Power(Hefei University of Technology),Hefei 230009,China;Institute of Energy,Hefei Comprehensive National Science Center,Hefei 230051,China)

机构地区：[1]新能源电力系统国家重点实验室(华北电力大学),北京102206 [2]电能高效高质转化全国重点实验室(合肥工业大学),合肥230009 [3]合肥综合性国家科学中心能源研究院,合肥230051

出　　处：《半导体技术》2024年第11期1008-1015,共8页Semiconductor Technology

基　　金：国家自然科学基金(52007061)。

摘　　要：在SiC MOSFET的功率循环测试(PCT)中,饱和压降主要表征键合线的老化状态,其值由导通电阻决定。SiC MOSFET的阈值电压漂移会在导通电阻中引入非键合线老化导致的芯片电阻增量,进而影响寿命判断。为了准确判定键合线失效,设计和搭建阈值电压漂移在线监测平台,并结合实测阈值电压漂移数据解耦出芯片电阻增量,进而对实测饱和压降进行补偿,实现对SiC MOSFET功率循环寿命的修正。结果表明,同一器件寿命修正前后的结果基本一致,阈值电压漂移主要影响PCT前期的饱和压降,对最终寿命判定结果没有影响。该研究成果可为SiC MOSFET封装可靠性测试提供参考。In the power cycling test(PCT)of SiC MOSFETs,the saturation voltage drop mainly represents the aging state of the bonding wire,and its value is determined by the on-resistance.Threshold voltage drift in SiC MOSFETs introduces chip resistance increments that are not caused by bonding wire aging into the on-resistance,which affects the lifetime judgment.In order to determine the bonding wire failure accurately,the threshold voltage drift online monitoring platform was designed and built,and the chip resistance increment was decoupled from the measured threshold voltage drift data,then the measured saturation voltage drop was compensated,so as to correct the power cycling lifetime of SiC MOSFETs.The results show that the results of the same device before and after the lifetime correction are basically the same,the threshold voltage drift mainly affects the saturation voltage drop in the early stage of PCT,and has no effect on the final lifetime determination results.The research results can provide reference for reliability test of SiC MOSFET package.

关 键 词：SiC MOSFET 阈值电压漂移 功率循环测试(PCT) 在线监测 芯片电阻 键合线失效 寿命修正 

分 类 号：TN386.1[电子电信—物理电子学] TN406