集成DTC的埋入硅桥式扇出型封装的去耦设计  

Decoupling Design of Fan-out Embedded Bridge Package with Integrated DTCs

作　　者：李雨兴 陈天放 李君[1] 戴风伟[1,2] Li Yuxing;Chen Tianfang;Li Jun;Dai Fengwei(Institute of Microelectronics,Chinese Academy of Sciences,Beijing 100029,China;National Center for Advanced Packaging Co.,Ltd.,Wuxi 214135,China)

机构地区：[1]中国科学院微电子研究所,北京100029 [2]华进半导体封装先导技术研发中心有限公司,江苏无锡214135

出　　处：《半导体技术》2024年第11期1016-1022,共7页Semiconductor Technology

基　　金：国家自然科学基金(62227814)。

摘　　要：对于供电网络面临的电源完整性挑战,采用一种集成深槽电容(DTC)的埋入硅桥式扇出型封装结构,以改善其供电性能。介绍了硅桥芯片和DTC的制作工艺以及DTC与埋入硅桥芯片的连接方式,并对硅桥芯片、DTC分别进行仿真,以验证DTC的去耦效果。进一步研究了集成DTC的埋入硅桥式扇出型封装、在基板背贴硅电容的扇出型封装和无去耦电容的扇出型封装3种方案对电源分配网络(PDN)阻抗的去耦效果。通过对比3种方案的仿真结果,发现埋入硅桥式扇出型封装结构的自阻抗值和转移阻抗值较在基板背贴硅电容的扇出型封装结构分别低74%和95%,较无去耦电容的扇出型封装结构分别低91%和97%。For power integrity challenges faced by power supply networks,a fan-out embedded bridge package structure with integrated deep trench capacitors(DTCs)was adopted to improve the power supply performance.The fabrication process of the silicon bridge chip and DTC as well as the connection between the DTC and the embedded silicon bridge chip were introduced,and the silicon bridge chip and DTC were simulated separately to verify the decoupling effect of DTC.Furthermore,the decoupling effects of three schemes on the impedance of the power delivery network(PDN)were investigated separately,such as the fan-out embedded bridge package with integrated DTC structure,the fan-out package with silicon capacitors on the backside of the substrate and the fan-out package without decoupling capacitor.Comparison of simulation results of three schemes demonstrates that the self-impedance and transfer impedance values of the fan-out embedded bridge package structure are 74%and 95%lower than those of the fan-out package structure with silicon capacitor on the backside of the substrate,and 91%and 97%lower than those of the fan-out package structure without decoupling capacitor,respectively.

关 键 词：硅桥芯片 深槽电容(DTC) 埋入硅桥式扇出型封装 电源分配网络(PDN) 去耦电容 

分 类 号：TN405.97[电子电信—微电子学与固体电子学]