本征基区尺寸对双极器件总电离剂量辐射效应的影响  

Influence of Intrinsic Base Region Size on Total Ionizing Dose Radiation Effect of Bipolar Devices

作　　者：葛超洋 杨强 李燕妃[1,2,3] 孙家林 谢儒彬[1,2,3] Ge Chaoyang;Yang Qiang;Li Yanfei;Sun Jialin;Xie Rubin(The 58th Research Institute,CETC,Wuxi 214035,China;National Key Laboratory of Integrated Circuits and Microsystems,Wuxi 214035,China;School of Integrated Circuit Science and Engineering,University of Electronic Science and Technology of China,Chengdu 610054,China)

机构地区：[1]中国电子科技集团公司第五十八研究所,江苏无锡214035 [2]集成电路与微系统全国重点实验室,江苏无锡214035 [3]电子科技大学集成电路科学与工程学院,成都610054

出　　处：《半导体技术》2024年第11期1036-1042,共7页Semiconductor Technology

摘　　要：基于标准0.18μm BCD工艺,对双极器件总电离剂量(TID)辐射效应进行了研究,提出了一种提高双极器件抗总电离剂量辐射能力的方法。理论分析表明,在标准0.18μm BCD工艺中,双极器件总电离剂量辐射的敏感区域位于浅沟槽隔离结构下方、基极接触区和发射极边缘之间的本征基区。对不同本征基区尺寸的双极器件进行了总电离剂量辐射实验,研究了本征基区尺寸对双极器件电流增益随总电离剂量退化的影响。实验结果表明,在相同总电离剂量下,双极器件本征基区尺寸越小,增益衰减比例越小,辐射敏感性越低。将10 V纵向npn(VNPN)器件的本征基区尺寸由1.4μm减小至0.6μm,可将150 krad(Si)总电离剂量辐射后的归一化电流增益由0.6132增大到0.7081。因此,减小本征基区尺寸是一种有效的双极器件总电离剂量辐射加固技术。Based on the standard 0.18μm BCD process,the total ionizing dose radiation effect of bipolar devices was studied,and a method to enhance the total ionizing dose radiation resistance of bipolar devices was proposed.The theoretical analysis indicats that,in the standard 0.18μm BCD process,the sensitive region for total ionizing dose radiation of bipolar devices is the intrinsic base region located beneath the shallow trench isolation structure,and between the base contact region and the emitter region edge.Total ionizing dose radiation experiments of bipolar devices with different intrinsic base region sizes were carried out,and the influence of the intrinsic base region size on the current gain of bipolar devices with total ionizing dose degradation was studied.The experiment results show that under the same total ionizing dose,the smaller the intrinsic base region size,the less the gain attenuation,and the lower the radiation sensitivity.Reducing the intrinsic base size of the 10 V vertical npn(VNPN)device from 1.4μm to 0.6μm can increase the normalized current gain from 0.6132 to 0.7081 after 150 krad(Si)total ionizing dose radiation.Therefore,reducing the intrinsic base region size is an effective total ionizing dose radiation hardening technique for bipolar devices.

关 键 词：双极器件 总电离剂量(TID)辐射 本征基区 0.18μm BCD工艺 

分 类 号：TN322.8[电子电信—物理电子学] TN306