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作 者:张宜明 张勇[1] 牛斌 代鲲鹏 张凯 陈堂胜 ZHANG Yiming;ZHANG Yong;NIU Bin;Dai Kunpeng;ZHANG Kai;CHEN Tangshen(School of Electronic Science and Engineering,University of Electronic Science and Technology of China,Chengdu,611731,CHN;National Key Laboratory of Solid-state Microwave Devices and Circuits,Nanjing,210016,CHN)
机构地区:[1]电子科技大学电子科学与工程学院,成都611731 [2]固态微波器件与电路全国重点实验室,南京210016
出 处:《固体电子学研究与进展》2024年第5期390-395,共6页Research & Progress of SSE
基 金:固态微波器件与电路全国重点实验室基金开放课题项目(61428032204)。
摘 要:基于太赫兹单片集成技术,设计并加工了一款560 GHz次谐波混频器。建立了二极管的三维电磁模型进行全波仿真,并结合二极管SPICE参数模型,获得了包括寄生参数和本征参数的二极管完整模型。基于半分部−半整体设计法对电路进行了仿真优化,既具有灵活性,电路整体尺寸也较小。整体电路设计在3μm厚的GaAs薄膜上,有效地抑制了高次模的传输,同时降低传输损耗。通过铺大面积的梁氏引线提供足够的应力支撑,提高电路的稳定性。实验结果表明:本振驱动功率3 mW下,混频器在520~600 GHz射频范围内变频损耗小于11 dB。Based on terahertz monolithic integration technology,a 560 GHz subharmonic mixer was designed.The three-dimensional electromagnetic model of the diode was established for full-wave simulation.Combined with the SPICE parameter model of the diode,a complete diode model includ⁃ing parasitic parameters and intrinsic parameters was obtained.The circuit was simulated and opti⁃mized based on the half-subdivision and half-global design method,which is flexible and the size of the circuit is small.The whole circuit is designed on a 3μm thick GaAs membrane,effectively suppresses the transmission of higher-order modes and reduces the transmission loss.The stress support is provid⁃ed by laying a large area of beam⁃lead to ensure the stability of the circuit.The experimental results show that when the local oscillator drive power is 3 mW,the conversion loss of the mixer is less than 11 dB within 520-600 GHz.
关 键 词:太赫兹单片集成电路 次谐波混频器 肖特基势垒二极管
分 类 号:TN773[电子电信—电路与系统]
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