太赫兹GaN SBD外延材料的应力调控及低缺陷密度控制技术研究  

Study of Strain Modulation and Low Density of Defects in Control for Terahertz GaN SBD Epitaxy

作　　者：李传皓 李忠辉[1,2,3] 彭大青 王克超[1,2] 杨乾坤 张东国[1,2,3] LI Chuanhao;LI Zhonghui;PENG Daqing;WANG Kechao;YANG Qiankun;ZHANG Dongguo(National Key Laboratory of Solid-state Microwave Devices and Circuits,Nanjing,210016,CHN;Nanjing Electronic Devices Institute,Nanjing,210016,CHN;CETC Key Laboratory of Carbon-based Electronics,Nanjing,210016,CHN)

机构地区：[1]固态微波器件与电路全国重点实验室,南京210016 [2]南京电子器件研究所,南京210016 [3]中国电科碳基电子重点实验室,南京210016

出　　处：《固体电子学研究与进展》2024年第5期425-429,共5页Research & Progress of SSE

摘　　要：采用金属有机物化学气相沉积(Metal organic chemical vapor deposition,MOCVD)技术在101.6 mm(4英寸)半绝缘SiC衬底上开展太赫兹用GaN肖特基势垒二极管(Schottky barrier diode,SBD)外延材料应力演进及缺陷密度控制的研究。提出了一种基于AlGaN过渡层的应力调控方案,实现了外延材料的应力调控;采用低温脉冲式掺杂技术生长n+-GaN层,降低了外延材料的缺陷密度,提升了晶体质量。研制的101.6 mm GaN SBD外延材料的弯曲度(Bow)/翘曲度(Warp)为-12/18μm,(002)/(102)面半高宽为148/239 arcsec,方阻9.2Ω/□,方阻片内不均匀性1.1%,并基于自研材料实现了截止频率为1.12 THz的GaN SBD器件的研制。The stress evolution and control of defect density of terahertz GaN Schottky barrier diode(SBD)epitaxy grown on 101.6 mm(4-inch)semi-insulating SiC substrate were studied by metal organic chemical vapor deposition(MOCVD).A stress modulation scheme based on AlGaN transition layer was proposed,achieving stress well in control for GaN SBD epitaxy.Simultaneously,a pulse-doping process at a lower temperature was introduced into n+-GaN layer,which remarkably reduces density of defects and improves crystalline quality of GaN SBD epitaxy.The as-grown 101.6 mm GaN SBD epitaxy possesses a wafer bow/warp of-12/18μm,fullwidth at halfmaximum(FWHM)of(002)/(102)peaks of 148/239 arcsec,sheet resistance of 9.2Ω/□with nonuniformity in wafer of 1.1%.Finally,a GaN SBD device is fabricated based on the own epitaxy,showing a cut-off frequency up to 1.12 THz.

关 键 词：氮化镓 外延材料 太赫兹 应力调控 低缺陷密度 

分 类 号：TN304[电子电信—物理电子学]