一种具有高ESD泄放电流的AlGaN/GaN HEMT器件  

An AlGaN/GaN HEMT Device with High ESD Discharge Current Capability

作　　者：吴家旭 成建兵[1] 孙旸 周成龙 姜圣杰 WU Jiaxu;CHENG Jianbing;SUN Yang;ZHOU Chenglong;JIANG Shengjie(College of electron and optical engineering&College of flexible electronics(future technology),Nanjing University of Posts and Telecommunications,Nanjing,210023,CHN)

机构地区：[1]南京邮电大学电子与光学工程学院&柔性电子(未来技术)学院,南京210023

出　　处：《固体电子学研究与进展》2024年第4期289-294,共6页Research & Progress of SSE

基　　金：国家自然科学基金资助项目(61274080)。

摘　　要：为满足AlGaN/GaN HEMT器件的高静电放电(Electrostatic discharge, ESD)防护需求,提出了一种用于泄放静电电荷的具有掺杂沟槽的GaN HEMT防护结构。通过在沟道层下方引入沟槽,提高了GaN HEMT在面对ESD事件时的电流泄放能力,同时将沟槽设置在栅极与漏极之间,降低了沟槽对栅极控制的影响,保证了栅极的稳定性。对所提结构在ESD条件下的电流泄放能力进行了仿真验证,结果表明,相比于常规的GaN HEMT结构,沟槽结构GaN HEMT的泄放电流提高了32.7%,并且当沟槽与栅极距离大于0.3μm时,沟槽对阈值电压几乎没有影响。In order to satisfy the high electrostatic discharge(ESD)protection requirements of AlGaN/GaN HEMT devices,a novel ESD protection structure for GaN HEMT with doped trench was proposed.The current discharge capability of HEMT was enhanced when facing ESD events due to the created trench.Furthermore,the trench was created between the gate and drain,the impact on the gate control was minimized,thereby ensuring the stability of gate.The simulated results show that compared to the conventional HEMT structure,the discharge current of the proposed structure in-creases by 32.7%.Furthermore,when the distance between the trench and the gate exceeds 0.3μm,the trench has no discernable effect on the threshold voltage.

关 键 词：高电子迁移率晶体管 静电放电 高泄放电流 沟槽 

分 类 号：TN386[电子电信—物理电子学]