基于石英薄膜工艺的D波段固定衰减器设计及实现  

Design and Implementation of D⁃band Fixed Attenuator Based on Quartz Thin⁃film Process

作　　者：宗原 杨笔帆 成海峰[2] 赵亮 郭健[1] ZONG Yuan;YANG Bifan;CHENG Haifeng;ZHAO Liang;GUO Jian(The State Key Laboratory of Millimeter Waves,Southeast University,Nanjing,210096,CHN;Nanjing Electronic Devices Institute,Nanjing,210016,CHN;School of Cyber Science and Engineering,Southeast University,Nanjing,210096,CHN;Nanjing Research Institute of Electronics Technology,Nanjing,210039,CHN)

机构地区：[1]东南大学毫米波全国重点实验室,南京210096 [2]南京电子器件研究所,南京210016 [3]东南大学网络空间安全学院,南京210096 [4]南京电子技术研究所,南京210039

出　　处：《固体电子学研究与进展》2024年第4期295-301,共7页Research & Progress of SSE

基　　金：国防重点实验室基金项目(612502200302)。

摘　　要：薄膜电阻具有较为精确的电阻值,可用于微波固定衰减器设计。然而随着工作频率的升高,薄膜电阻的寄生参数随之增大,影响固定衰减器的衰减精度及回波性能。本文基于传统微波频段薄膜电阻等效电路模型,提出了一种十四元件等效电路模型。采用Ansys HFSS软件对薄膜电阻进行三维电磁场仿真并提取其S参数,通过S参数曲线拟合,最终确定各元件参数值。仿真结果表明,该等效电路模型在0.1~180.0 GHz可有效表征薄膜电阻的电气特性。在此基础上,采用石英薄膜工艺研制了三款不同衰减值的D波段(110~170 GHz)固定衰减器,并通过在片匹配电路补偿键合金丝和薄膜电阻寄生参量的影响。此外,还设计了波导-微带转换电路,将微带模式转换为标准波导模式进行衰减器性能的测量。测试结果表明,在110~170 GHz频带内,3 dB衰减器的衰减典型值为4 dB,回波损耗大于13.3 dB;6 dB衰减器的衰减典型值为5.5 dB,回波损耗大于11.4 dB;9 dB衰减器的衰减典型值为8 dB,回波损耗大于11.4 dB。研制的固定衰减器可将现有固定衰减器的工作频率拓宽至110 GHz以上,用于信号功率调节及改善器件级间回波的影响。Thin-film resistors have more accurate resistance values and can be used in fixed atten-uator designs.However,with the increase of the operating frequency,the parasitic parameters of the thin film resistor increase,which affects the attenuation accuracy and return performance of the fixed attenuators.Based on the traditional microwave band thin-film resistor equivalent circuit model(ECM),a fourteen-element ECM was proposed in this paper.Ansys HFSS software was used to sim-ulate the three-dimensional electromagnetic field of the thin-film resistor and extract its S-parameters,and the parameters of each element were finally determined by S-parameter curve fitting.The simulat-ed results show that the ECM can effectively characterize the electrical properties of the film resistor among 0.1-180.0 GHz.On this basis,three D-band(110-170 GHz)fixed attenuators with different at-tenuation are developed using quartz thin-film process,and the influence of the parasitic parameters of the bonding wires and thin-film resistors was compensated by the on-chip matching circuit.Additional-ly,a waveguide/microstrip transition circuit was designed for converting microstrip mode to standard waveguide mode for attenuator performance measurement.The measured results show that in the 110-170 GHz operating band,the typical attenuation of the 3-dB,6-dB and 9-dB attenuator are 4 dB,5.5 dB and 8 dB,and the return loss are greater than 13.3 dB,11.4 dB and 11.4 dB,respectively,which are in good agreement with simulated results.The developed fixed attenuators can extend the operating frequency of existing ones to above 110 GHz,suitable for signal power adjustment and inter-device return loss effects improvement.

关 键 词：太赫兹 固定衰减器 石英薄膜工艺 薄膜电阻 等效电路模型 

分 类 号：TN715[电子电信—电路与系统]