非层状二维γ-In_(2)Se_(3)的各向异性生长及其光学特性  

Anisotropic growth and optical properties of non-layered_(2)Dγ-In_(2)Se_(3)

作　　者：雷子煊 张文婷 夏晓凤 王红艳[1] LEI Zi-Xuan;ZHANG Wen-Ting;XIA Xiao-Feng;WANG Hong-Yan(Key Laboratory of Advanced Technology of Materials,School of Physical Science and Technology,Southwest Jiaotong University,Chengdu 610031,China)

机构地区：[1]西南交通大学物理科学与技术学院材料先进技术重点实验室,成都610031

出　　处：《原子与分子物理学报》2025年第6期58-65,共8页Journal of Atomic and Molecular Physics

基　　金：国家自然科学基金青年科学基金(51902272);四川省科技厅计划项目(2021 YFG0228,2682021 GF007)。

摘　　要：非层状二维(2D)γ-In_(2)Se_(3)具有优异的光学和电学性能,在超薄柔性器件和光电探测领域具有广泛的应用前景.然而,相较于层状的类石墨烯材料,非层状材料固有的各向同性化学键,使得其二维各向异性生长面临较大的挑战.本研究构建了一种新的化学气相沉积(CVD)生长策略,成功制备了高质量的2Dγ-In_(2)Se_(3).首次选用低熔点的铟粉为前驱体,有效降低了生长温度.此外,生长过程去除了CVD法合成二维硒化物时不可避免的危险气体H_(2),这不仅能有效抑制InSe副产物的形成,还降低了实验危险性.通过探究原料用量、生长温度及时间等参数对样品形貌和厚度的影响,获得了最佳生长窗口.详细表征了2Dγ-In_(2)Se_(3)的微观形貌、化学组分、晶体结构和光学特性等.结果表明,样品具有强烈的光致发光(PL)效应,与γ-In_(2)Se_(3)的直接带隙属性相吻合.随着厚度的减小,PL峰会发生蓝移,说明光学带隙随之增大.Raman光谱显示,不同厚度的样品其特征峰也会发生移动,说明厚度会影响2Dγ-In_(2)Se_(3)的分子振动行为.由此可见,通过生长参数调控2Dγ-In_(2)Se_(3)的厚度,可实现对其光学带隙和分子振动行为的调控,这将为相关的理论研究和光电器件应用提供基本的材料平台.Non-layered two-dimensional(2D)γ-In_(2)Se_(3)has excellent optical and electrical properties and has broad application prospects in the fields of ultra-thin flexible devices and photoelectric detection.However,compared with layered graphene-like materials,the inherent isotropic chemical bonds of non-layered materials make their two-dimensional anisotropic growth face greater challenges.In this study,a new chemical vapor deposition(CVD)growth strategy was constructed to successfully prepare high-quality_(2)Dγ-In_(2)Se_(3).For the first time,indium powder with low melting point was selected as the precursor,which effectively reduced the growth temperature.In addition,the growth process removes H_(2),an unavoidable hazardous gas in the synthesis of two-dimensional selenides by CVD,which not only effectively inhibits the formation of InSe byproducts,but also reduces the experimental risk.The optimum growth window was obtained by investigating the effects of raw material dosage,growth temperature,and time on the morphology and thickness of the sample.The microstructure,chemical composition,crystal structure,and optical properties of_(2)Dγ-In_(2)Se_(3)were characterized in detail.The results show that the sample has a strong photoluminescence(PL)effect,which is consistent with the direct band gap property ofγ-In_(2)Se_(3).As the thickness decreases,the PL peak will shift blue,indicating that the optical band gap will increase.Raman spectra show that the characteristic peaks of samples with different thicknesses will also shift.It shows that the thickness will affect the molecular vibration behavior of_(2)Dγ-In_(2)Se_(3).It can be seen that regulating the thickness of_(2)Dγ-In_(2)Se_(3)through growth parameters can realize the regulation of its optical band gap and molecular vibrational behavior,which will provide a basic material platform for related theoretical research and optoelectronic device applications.

关 键 词：非层状材料 二维γ-In_(2)Se_(3) 化学气相沉积 各向异性生长 带隙 

分 类 号：O56[理学—原子与分子物理]