二维γ-GeSe基异质结的电子特性研究  

Electronic properties of the heterostructure based on 2Dγ-GeSe

作　　者：乔方卿銮 乔帅 张腊梅 商继敏 冯世全 QIAOFANG Qing-Luan;QIAO Shuai;ZHANG La-Mei;SHANG Ji-Min;FENG Shi-Quan(Henan Key Laboratory of Magnetoelectronic Information Functional Materials,Zhengzhou University of Light Industry,Zhengzhou 450002,China)

机构地区：[1]郑州轻工业大学电子信息学院河南省磁电信息功能材料实验室,郑州450002

出　　处：《原子与分子物理学报》2025年第5期175-181,共7页Journal of Atomic and Molecular Physics

摘　　要：二维γ-GeSe拥有类似石墨烯的优异导电特性.利用第一性原理,对二维γ-GeSe的结构和电子特性进行了研究;构建了γ-GeSe/SnSe 2异质结,结果表明该异质结是典型的Ⅱ型能带排列.在施加电场后,其带隙值会有明显的增大,但其能带排列类型保持稳定的Ⅱ型能带排列,这种特性表明此异质结具有在太阳能电池领域应用的潜力.构建的γ-GeSe/GaSe异质结具有典型的Ⅰ型能带排列,施加电场对异质结的电子结构影响甚微;但能一直保持稳定的Ⅰ型能带排列,表明该异质结在发光二极管领域和激光器中具有应用潜力.The newly discoveredγ-GeSe has attracted attention due to its novel structure,showing significant properties similar to graphene.Based on the density functional theory,the electronic properties of the 2Dγ-GeSe van der Waals(vdW)heterostructure were investigated,and the effects of applying electric field and strain also were discussed.According to the results,theγ-GeSe/SnSe 2 heterostructure presents the intrinsic type-Ⅱband alignment,and it is unchanged with strain and electric field,which appears potential applications in the field of solar cells.Anotherγ-GeSe/GaSe heterostructure demonstrates a typical type-Ⅰband alignment.It is found that the electric field has little effect onγ-GeSe/GaSe,and the stable type-Ⅰband alignment is always maintained.The results show thatγ-GeSe/GaSeheterostructure has significant potential for devices in light-emitting diodes.

关 键 词：二维γ-GeSe 范德瓦尔斯异质结 电子特性 能带排列 

分 类 号：O471[理学—半导体物理]