基于分子束外延技术可控制备Ga原子团簇的研究  

Research on the controllable preparation of Ga atomic clusters based onmolecular beam epitaxy technology

作　　者：马玉麟 郭祥 丁召[1,2,3] MA Yu-Lin;GUO Xiang;DING Zhao(College of Big Data and Information Engineering,Guizhou University,Guiyang 550025,China;Key Laboratory of Micro-Electronics and Software Technology of Guizhou Province,Guiyang 550025,China;Power Semiconductor Device Reliability Engineering Center of the Ministry of Education,Guiyang 550025,China)

机构地区：[1]贵州大学大数据与信息工程学院,贵阳550025 [2]贵州省微纳电子与软件技术重点实验室,贵阳550025 [3]半导体功率器件可靠性教育部工程研究中心,贵阳550025

出　　处：《原子与分子物理学报》2025年第3期77-84,共8页Journal of Atomic and Molecular Physics

基　　金：国家自然科学基金(61564002);贵州省科学技术基金资助项目(黔科合基础[2020]1Y271和[2017]1055);半导体功率器件可靠性教育部研究中心开放基金(ERCME-KFJJ2019-(07));贵州大学培育项目(贵大培育[2019]58号)。

摘　　要：本研究基于分子束外延(Molecular Beam Epitaxy,MBE)技术在Si(100)衬底表面成功制备金属Ga原子团簇.通过控制变量法,研究其尺寸形貌与工艺参数之间的关系.第一组对照实验分别在940℃、970℃、1000℃的Ga源温度下制备Ga原子团簇.实验结果表明,Ga源温度的升高导致Ga的蒸发量增加,进而沉积在Si衬底表面的Ga原子增多,Ga原子自组装成团簇,最终表现为Ga原子团簇的高度升高.第二组对照实验分别在3 s、6 s、10 s、40 s、50 s、60 s的沉积时长下制备Ga原子团簇.实验结果表明,沉积时长增加导致团簇的高度逐渐增加,主要由新吸附原子和竞争效应驱动.第三组对照实验分别在0 s、60 s、300 s的退火时长下制备Ga原子团簇.实验结果表明,退火时长的增加导致团簇的高度下降和团簇内的原子重新排列和分布有关.第四组对照实验分别在420℃、500℃的退火温度下制备Ga原子团簇.实验结果表明,升温至500℃退火会促进Ga原子团簇呈现有序排列,是表面原子的热运动和Ga原子团簇与Si(100)的晶格匹配度的共同作用的结果.This study successfully prepared metal Ga atomic clusters on the Si(100)substrate surface using Molecular Beam Epitaxy(MBE)technology.The relationship between the size and morphology of these clusters and process parameters was investigated through controlled experiments.In the first set of control experiments,Ga atomic clusters were prepared at Ga source temperatures of 940℃,970℃,and 1000℃.The results showed that an increase in Ga source temperature led to an increase in Ga evaporation,resulting in more Ga atoms deposited on the Si substrate surface.This,in turn,led to the self-assembly of Ga atoms into clusters,ultimately manifested as an increase in the height of Ga atomic clusters.In the second set of control experiments,Ga atomic clusters were prepared at deposition times of 3 s,6 s,10 s,40 s,50 s,and 60 s.The experimental results demonstrated that an increase in deposition time gradually increased the height of the clusters,primarily driven by the adsorption of new atoms and competitive effects.In the third set of control experiments,Ga atomic clusters were prepared with annealing times of 0 s,60 s,and 300 s.The results showed that an increase in annealing time resulted in a decrease in cluster height,associated with the rearrangement and redistribution of atoms within the clusters.In the fourth set of control experiments,Ga atomic clusters were prepared at annealing temperatures of 420℃ and 500℃.The experimental results indicated that annealing at 500℃ promoted the ordered arrangement of Ga atomic clusters,which is a result of the combined effects of surface atom thermal motion and the matching of Ga atomic clusters with the Si(100)lattice.

关 键 词：MBE Ga原子团簇 Ga源温度 沉积时长 退火时长 

分 类 号：O782[理学—晶体学]