强约束环境中高精度微型集成式压力传感芯片设计  

Design of high⁃precision micro integrated pressure sensing chip in strongly constrained environment

作　　者：王曦 温鹏 WANG Xi;WEN Peng(Xi’an Siwei Sensor Technology,Xi’an 710000,China)

机构地区：[1]西安思微传感科技有限公司,陕西西安710000

出　　处：《传感器与微系统》2024年第11期81-85,共5页Transducer and Microsystem Technologies

摘　　要：针对强约束环境中多路集成压力测量传感器的应用需求,设计了一种可适应有限空间、宽温区、高精度的微型压力传感器芯片。首先,分析了强约束环境对压力传感芯片设计的性能影响因素,从硅材料晶体结构选择、掺杂浓度控制和硅薄膜厚度3个方面针对性研究改善方法;然后,仿真确定了单晶硅式压力敏感芯片的最优设计参数,并基于SOI工艺对设计版图进行流片;最后,在模拟的强约束环境中进行性能试验验证。试验结果表明:在所需全温区间-20~60℃,压力满量程为±2.5 psi的指标下,所设计的芯片测量灵敏度可达4 mV/V,线性度为0.08%FS,重复性为0.05%FS,压力迟滞为0.04%FS,在强约束环境中表现出优良的性能。Aiming at application requirements of multi⁃path integrated pressure measurement sensors in strongly constrained environment,a micro pressure sensor chip that can adapt to limited space,wide temperature range,and high precision is designed.Firstly,the performance influencing factors of the strong constraint environment on the design of pressure sensing chips are analyzed,and targeted improvement methods are studied from three aspects:selection of silicon material crystal structure,doping concentration control,and silicon film thickness.Then,the optimal design parameters of the single crystal silicon pressure sensing chip are determined through simulation,and the design layout are taped out based on SOI technology.Finally,performance test verification are conducted in simulated strong constraint environment.The test results show that under the required full temperature range of-20~60℃and pressure full scale of±2.5 psi,the designed chip measurement sensitivity can reach 4 mV/V,with linearity of 0.08%FS,repeatability of 0.05%FS,pressure hysteresis of 0.04%FS,and it shows excellent performance in strong constraint environment.

关 键 词：强约束环境 压力传感器 芯片设计 绝缘体上硅 高精度 

分 类 号：TP212[自动化与计算机技术—检测技术与自动化装置]