四方铁电体顶点畴的原子尺度构型研究  

Atomic⁃scale observation of domain vertex in ferroelectric films

作　　者：吕晓东 刘嘉琦 唐云龙 朱银莲 马秀良 LÜXiaodong;LIU Jiaqi;TANG Yunlong;ZHU Yinlian;MA Xiuliang(Shenyang National Laboratory for Materials Science,Institute of Metal Research,Chinese Academy of Sciences,Shenyang Liaoning 110016;School of Material Science and Engineering,University of Science and Technology of China,Shenyang Liaoning 110016;Bay Area Center for Electron Microscopy,Songshan Lake Materials Laboratory,Dongguan Guangdong 523808;School of Materials Science and Engineering,Hunan University of Science and Technology,Xiangtan Hunan 411201;Quantum Science Center of Guangdong-HongKong-Macao Greater Bay Area,Shenzhen Guangdong 518000;Institute of Physics,Chinese Academy of Sciences,Beijing 100190,China)

机构地区：[1]中国科学院金属研究所沈阳材料科学国家研究中心,辽宁沈阳110016 [2]中国科学技术大学材料科学与工程学院,辽宁沈阳110016 [3]松山湖材料实验室大湾区显微科学与技术研究中心,广东东莞523808 [4]湖南科技大学材料科学与工程学院,湖南湘潭411201 [5]粤港澳大湾区量子科学中心,广东深圳518000 [6]中国科学院物理研究所,北京100190

出　　处：《电子显微学报》2024年第4期422-428,共7页Journal of Chinese Electron Microscopy Society

基　　金：中国科学院金属研究所创新基金资助项目(No.2024-ZD01).

摘　　要：结合精密脉冲激光沉积和原子级分辨率透射电子显微镜技术,本文研究了拉应变下外延生长的PbTiO_(3)/SrTiO_(3)多层薄膜中灵活多变的畴组态,分析了不同类型畴在交汇顶点构成的新型顶点畴及其极化组态。这些顶点畴可能与薄膜中新型极化拓扑构型(通量全闭合畴、涡旋畴)的形成有密切关系,并对未来构建新的极化拓扑结构有所启发。部分顶点畴同时与薄膜中存在的各类型带电畴壁相互作用,这些新型极化组态对薄膜的铁电性和导电性能等都有重要影响,为研究与器件相关的界面等问题提供了重要思路。Due to their exceptional dielectric,piezoelectric,and ferroelectric properties,ferroelectric materials hold significant potential for various applications across diverse fields.The discovery of ferroelectric topological structures has significantly enhanced the density of ferroelectric memory devices.Investigating the intricate formation mechanisms of these topological structures is crucial for understanding and constructing novel types of such structures.This study examined the flexible domain configurations in epitaxially grown PbTiO_(3)/SrTiO_(3)multilayer films under tensile strain using precision pulsed laser deposition and atomic resolution transmission electron microscopy in this study.These vertex domains may be closely associated with the emergence of novel polarization topologies,such as flux⁃fully closed domains and vortex domains,in thin films,offering inspiration for future designs of polarization topologies.Additionally,certain vertex domains simultaneously interact with various types of charged domain walls within the thin films,significantly affecting the ferroelectric and conductive properties of these films.This finding provides valuable insights into interface⁃related issues concerning devices.

关 键 词：铁电薄膜 畴结构 顶点畴 PbTiO_(3) 

分 类 号：TB383[一般工业技术—材料科学与工程] O77[理学—晶体学] TG115.215.3[金属学及工艺—物理冶金]