Highly efficient AlGaN-based deep-ultraviolet lightemitting diodes:from bandgap engineering to device craft  

作　　者：Xu Liu Zhenxing Lv Zhefu Liao Yuechang Sun Ziqi Zhang Ke Sun Qianxi Zhou Bin Tang Hansong Geng Shengli Qi Shengjun Zhou 

机构地区：[1]Center for Photonics and Semiconductors,School of Power and Mechanical Engineering,Wuhan University,Wuhan 430072,China [2]Ningbo ANN Semiconductor Co.Ltd.,Ningbo 315336,China [3]The Institute of Technological Sciences,Wuhan University,Wuhan 430072,China

出　　处：《Microsystems & Nanoengineering》2024年第4期343-353,共11页微系统与纳米工程（英文）

基　　金：financial support from the National Natural Science Foundation of China(Nos.52075394 and 51675386);the National Key Research and Development Program of China(Nos.2021YFB3600200 and 2022YFB3603603);the Key Research and Development Program of Hubei Province(No.2023BAB137);the Knowledge Innovation Program of Wuhan-Basic Research,the Fundamental Research Funds for the Central Universities,and the National Youth Talent Support Program.

摘　　要：AlGaN-based light-emitting diodes(LEDs)operating in the deep-ultraviolet(DUV)spectral range(210–280 nm)have demonstrated potential applications in physical sterilization.However,the poor external quantum efficiency(EQE)hinders further advances in the emission performance of AlGaN-based DUV LEDs.Here,we demonstrate the performance of 270-nm AlGaN-based DUV LEDs beyond the state-of-the-art by exploiting the innovative combination of bandgap engineering and device craft.By adopting tailored multiple quantum wells(MQWs),a reflective Al reflector,a low-optical-loss tunneling junction(TJ)and a dielectric SiO_(2)insertion structure(IS-SiO_(2)),outstanding light output powers(LOPs)of 140.1 mW are achieved in our DUV LEDs at 850 mA.The EQEs of our DUV LEDs are 4.5 times greater than those of their conventional counterparts.This comprehensive approach overcomes the major difficulties commonly faced in the pursuit of high-performance AlGaN-based DUV LEDs,such as strong quantum-confined Stark effect(QCSE),severe optical absorption in the p-electrode/ohmic contact layer and poor transverse magnetic(TM)-polarized light extraction.Furthermore,the on-wafer electroluminescence characterization validated the scalability of our DUV LEDs to larger production scales.Our work is promising for the development of highly efficient AlGaN-based DUV LEDs.

关 键 词：ALGAN DIODES ultraviolet 

分 类 号：TN31[电子电信—物理电子学]