SiC MOSFET改进关断瞬态模型研究  

Research on Improved Turn-off Transient Model of SiC MOSFET

作　　者：陈月清 袁梦寒 郭希铮[1] 焦健 游小杰[1] CHEN Yueqing;YUAN Menghan;GUO Xizheng;JIAO Jian;YOU Xiaojie(School of Electrical Engineering,Beijing Jiaotong University,Haidian District,Beijing 100044,China)

机构地区：[1]北京交通大学电气工程学院,北京市海淀区100044

出　　处：《中国电机工程学报》2024年第20期8201-8211,I0024,共12页PROCEEDINGS OF THE CHINESE SOCIETY FOR ELECTRICAL ENGINEERING

基　　金：中央高校基本科研业务费专项资金(科技领军人才团队项目)(2022JBXT006)。

摘　　要：传统碳化硅(silicon carbide,Si C)金属-氧化物半导体场效应晶体管(metal-oxide-semiconductorfield-effect transistor,MOSFET)关断瞬态模型忽略了在小负载电流或小驱动电阻下Si CMOSFET的沟道关断先于对管Si C肖特基势垒二极管导通的特殊关断模式,导致该工况下传统关断模型不适用。为解决该问题,该文在传统模型的基础上,加入了对特殊关断模式机理的详细分析,完善了SiCMOSFET的关断瞬态模型。所提模型采用时间分段、机理解耦以及参数解耦的求解方法,取消了模型的迭代,提高了模型的求解速度。仿真计算结果与实验测量结果对比表明,所提改进模型可以准确体现Si CMOSFET在不同关断模式下的瞬态波形,验证了改进模型的准确性、有效性及适用性。The traditional silicon carbide(SiC)metal-oxide-semiconductor field-effect transistor(MOSFET)turn-off transient model neglects the special turn-off mode where SiC MOSFET turns off its channel before SiC Schottky barrier diode(SBD)turns into freewheeling-state under small load current or small driving resistance,resulting in the traditional turn-off model not being applicable under this working condition.To solve this problem,this article adds detailed analysis of the special turn-off mode mechanism on the basis of traditional models,and improves the turn-off transient model of SiC MOSFET.The proposed model adopts a solution method of time slicing,mechanism decoupling,and parameter decoupling,eliminating the iteration of the model and improving the solution speed of the model.Simulation calculation and experimental waveforms are compared.The results show that the proposed improved model can accurately reflect the transient waveforms of SiC MOSFET under different turn-off modes,verifying the accuracy,effectiveness,and applicability of the improved model.

关 键 词：SiCMOSFET 关断瞬态改进模型 半桥电路 关断模式 

分 类 号：TM131.2[电气工程—电工理论与新技术]