先进封装Cu-Sn互连焊点界面金属间化合物研究进展  

Research Progress Intermetallic Compounds at the Interface of Cu-Sn Interconnect Solder Joints in Advanced Packaging

作　　者：陈平 Chen Ping(Guizhou Zhenhua Fengguang Semiconductor Co.,Ltd.,Guiyang 550018,China)

机构地区：[1]贵州振华风光半导体股份有限公司,贵阳550018

出　　处：《微纳电子技术》2024年第11期31-43,共13页Micronanoelectronic Technology

摘　　要：对先进封装中Cu-Sn焊点之间的界面金属间化合物(IMC)形成机理与生长控制进行阐述,分别从Cu-Sn焊点界面之间增加阻挡层与锡焊点内部掺杂合金元素两个方面介绍了Cu-Sn焊点之间良性IMC层的形成与生长控制机理。重点介绍了尺寸效应、热迁移和电迁移三种因素促进焊点界面恶性IMC层的形成原理,分析了恶性IMC层对焊点可靠性的影响与失效模式。对国内外控制良性IMC层的形成与生长的研究和抑制恶性IMC层的形成与生长的研究进行了评述,总结了近年来IMC层生长过程对先进封装Cu-Sn焊点可靠性影响的研究进展。最后,从焊点可靠性角度对良性IMC层的控制方法进行了分析总结,并从改良和创新两个方面对该领域未来的发展方向进行了展望。The formation mechanism and growth control of intermetallic compound(IMC)at the interface between Cu-Sn solder joints in advanced packaging are described.The formation and growth control mechanism of a benign IMC layer between Cu-Sn solder joints are introduced from two aspects of adding a barrier layer between Cu-Sn solder joints and doping alloy elements inside the solder joints.The formation principle of the malignant IMC layer at the solder joints interface promoted by three factors of size effect,thermal migration and electromigration are emphatically introduced.In addition,the impact and failure modes of malignant IMC layers on the reliability of solder joints are analyzed.The researches on controlling the formation and growth of the benign IMC layer and inhibiting the formation and growth of the malignant IMC layer at home and abroad are reviewed.The research progress of the effect of IMC layer growth process on the reliability of advanced packaging Cu-Sn solder joints in recent years is summarized.Finally,the control methods for benign IMC layers are analyzed and summarized from the perspective of solder joint reliability,and the future development directions of this field are prospected from two aspects of improvement and innovation.

关 键 词：先进封装 铜-锡焊点 可靠性 金属间化合物(IMC) 界面反应 

分 类 号：TG425[金属学及工艺—焊接]