Configuration design of a 2D graphene/3D AlGaN van der Waals junction for high-sensitivity and self-powered ultraviolet detection and imaging  

作　　者：YUANYUAN YUE YANG CHEN JIANHUA JIANG LIN YAO HAIYU WANG SHANLI ZHANG YUPING JIA KE JIANG XIAOJUAN SUN DABING LI 

机构地区：[1]School of Management Science and Information Engineering,Jilin University of Finance and Economics,Changchun 130117,China [2]Key Laboratory of Luminescence Science and Technology,Chinese Academy of Sciences&State Key Laboratory of Luminescence and Applications,Changchun Institute of Optics,Fine Mechanics and Physics,Chinese Academy of Sciences,Changchun 130033,China [3]State Key Laboratory of Integrated Optoelectronics,College of Electronic Science and Engineering,Jilin University,Changchun 130012,China

出　　处：《Photonics Research》2024年第9期1858-1867,共10页光子学研究（英文版）

基　　金：Natural Science Foundation of Jilin Province(20230101107JC,20230101345JC,20230508132RC);Science and Technology Research Project of Education Department of Jilin Province(JJKH20230183KJ);National Natural Science Foundation of China(61827813,62074147,62121005,62374165);Young Elite Scientists Sponsorship Program by CAST(2023QNRC001);General Project from Jilin University of Finance and Economics.

摘　　要：Two-dimensional(2D)graphene has emerged as an excellent partner for solving the scarcity of ultraviolet photodetectors based on three-dimensional(3D)AlGaN,in which the design of a 2D graphene/3D AlGaN junction becomes crucial.This study investigates the response mechanisms of two distinct graphene/AlGaN(Gr-AlGaN)photodetectors in the lateral and vertical configurations.For the lateral Gr-AlGaN photodetector,photogenerated electrons drifting into p-type graphene channel induce negative photoconductivity and a persistent photoconductive effect,resulting in a high responsivity of 1.27×10^(4) A∕W and detectivity of 3.88×10^(12) Jones.Although the response capability of a vertical Gr-AlGaN device is inferior to the lateral one,it shows significantly reduced dark current and self-powered detection.The photogenerated electron-hole pair can be spontaneously separated by the junction electric field and generate a photocurrent at zero bias.Hence,the vertical Gr-AlGaN photodetector array is satisfied for passive driving imaging like deep space detection.Conversely,the exceptional response of the lateral Gr-AlGaN device emphasizes its prospects for steady object recognition with low-light emission.Moreover,the improved imaging sharpness with light illumination duration makes it suitable for biomimetic visual learning,which follows a recognition to memory process.This study elucidates an efficient approach for diverse photodetection applications through the configuration design of Gr-AlGaN junctions.

关 键 词：ALGAN ULTRAVIOLET CONFIGURATION 

分 类 号：TB34[一般工业技术—材料科学与工程] TN36[电子电信—物理电子学]