基于激光加工的横向外延单晶金刚石缺陷密度调控研究  

Research on Defect Density Control of Transverse Epitaxial Single Crystal Diamond Based on Laser Processing

作　　者：文东岳 刘本建 赵继文[1] 郝晓斌 张森[1] 张宇民[1] 代兵[1] 李一村 朱嘉琦[1] WEN Dong-yue;ZHAO Ji-wen;HAO Xiao-bin;ZHANG Sen;LIU Ben-jian;ZHANGYu-min;DAI Bing;LI Yi-cun;ZHU Jia-qi(Harbin Institute of Technology,Harbin 150000,China;Zhengzhou Research Institute,Harbin Institute of Technology,Zhengzhou 450000,China)

机构地区：[1]哈尔滨工业大学,黑龙江哈尔滨150000 [2]哈工大郑州研究院,河南郑州450000

出　　处：《真空电子技术》2024年第5期1-8,共8页Vacuum Electronics

基　　金：哈工大原创前沿探索基金(HIT.OCEF.2022048);郑州市重大科技专项项目(2021KJZX0062);河南省重大科技专项项目(221100230300);自然科学基金(52072087,52102039);国家重点研发计划(2020YFA0709700);国家磁约束核聚变能发展研究专项(2019YFE03100200);广东省重点领域研发计划项目(2020B010169002)。

摘　　要：单晶金刚石是一种具有众多优良性能的晶体材料,被誉为终极半导体,随着5G和大数据时代的到来,高质量单晶金刚石成为了当代炙手可热的半导体材料。然而目前市面上的单晶金刚石存在着缺陷密度高,晶体质量差的问题,严重制约了单晶金刚石在半导体领域的发展。针对上述问题,通过激光加工制备出栅格状图形化的预结构金刚石衬底,并横向外延(Epitaxial-Lateral-Overgrown,ELO)得到了缺陷密度降低了25倍的生长层。对突破金刚石在尖端领域的晶体质量限制,具有重大指导意义。Single crystal diamond has numerous excellent properties and is known as the ultimate semiconductor.With the advent of 5 G and big data,high-quality single crystal diamond has become a hot semiconductor material.However,single crystal diamonds in current market have the problems of high defect density and poor crystal quality,which seriously restrict the development of single crystal diamond in semiconductor field.In response to above issues,a pre structured diamond substrate with grid like patterning is first prepared through laser processing,then a growth layer with a defect density reduced by 25 times can be obtained through epitaxial-lateral-overgrowth(ELO).The research has significant guiding significance for breaking through the crystal quality limitations of diamond in cutting-edge fields.

关 键 词：金刚石 缺陷密度 激光加工 横向外延 

分 类 号：TN249[电子电信—物理电子学]