金刚石半导体及功率肖特基二极管研究进展和挑战  

Research Progress and Challenges of Diamond Semiconductor and Power Schottky Barrier Diodes

作　　者：王启亮 张羿明[1,2] 李根壮 李柳暗 成绍恒 吕宪义[1,2] 李红东 邹广田 WANG Qi-liang;ZHANG Yi-ming;LI Gen-zhuang;LI Liu-an;CHENG Shao-heng;LV Xian-yi;LI Hong-dong;ZOU Guang-tian(State Key Laboratory of Superhard Materials,College of Physics,Jilin University,Changchun 130012,China;Shenzhen Research Institute,Jilin University,Shenzhen 518057,China)

机构地区：[1]吉林大学物理学院超硬材料国家重点实验室,吉林长春130012 [2]吉林大学深圳研究院,广东深圳518057

出　　处：《真空电子技术》2024年第5期18-28,共11页Vacuum Electronics

基　　金：吉林省自然科学基金(20240101313JC)。

摘　　要：金刚石作为一种超宽禁带半导体,是下一代功率电子器件和光电子器件最有潜力的材料之一。其产业化仍需解决几个关键技术问题:大尺寸单晶外延生长、高质量晶圆制备技术、高效可控的掺杂技术及先进终端结构。首先,介绍了拼接生长以及异质外延获得大尺寸单晶衬底的研究进展。进而,综述了大尺寸单晶金刚石位错、缺陷调控技术及其加工技术的研究进展。最后,从功率器件设计及制备角度总结了金刚石掺杂及终端结构设计面临的挑战并提出了潜在的解决方案。As an ultra-wide bandgap semiconductor,diamond is one of the most promising materials for next generation of power electronic devices and optoelectronic devices.However,the industrialization of diamond still needs to solve several key technical problems:large-sized single crystal epitaxial growth,high-quality wafer preparation technology,efficient and controllable doping technology,and advanced terminal structures.The research progress on mosaic growth and heteroepitaxy to obtain large-sized single crystal substrates is introduced.The research progress on dislocation and defect control techniques and cutting techniques for large-sized single crystal diamond is summarized.The challenges faced by diamond doping and terminal structure design are summarized from the perspective of power device design and fabrication,and the corresponding potential solutions are proposed.

关 键 词：金刚石 外延生长 位错调控 掺杂技术 功率器件设计 

分 类 号：TN386[电子电信—物理电子学]