基于表面终端的增强型金刚石场效应晶体管研究现状  

Research Status of Enhanced Diamond Field Effect Transistors Based on Surface Termination

作　　者：王玮 张明辉[1,2] 王艳丰 陈根强[1,2] 何适 王宏兴 WANG Wei;ZHANG Ming-hui;WANG Yan-feng;CHEN Gen-qiang;HE Shi;WANG Hong-xing(Key Laboratory for Physical Electronics and Devices,Ministry of Education,Xi'an Jiaotong University,Xi'an 710049,China;Institute of Wide Band Gap Semiconductor and Quantum Devices,School of Electronic Science and Engineering,Xi'an Jiaotong University,Xi'an 710049,China)

机构地区：[1]西安交通大学电子物理与器件教育部重点实验室,陕西西安710049 [2]西安交通大学电子与信息学部电子科学与工程学院宽禁带半导体与量子器件研究所,陕西西安710049

出　　处：《真空电子技术》2024年第5期29-46,53,共19页Vacuum Electronics

基　　金：科技部重点研发计划(2022YFB3608603,2021YFB3602100);国家自然科学基金(U21A2073,62304173,62304175,61804122,62074127);陕西省自然科学基金(2021GY-223,2023-JC-QN-0718,No.2023-JC-QN-0694);中国博士后科学基金(2022M712516,2020M683485)。

摘　　要：金刚石半导体材料具有禁带宽度大、击穿场强高、载流子迁移率高、热导率高、抗辐照、耐腐蚀等优良性能,基于金刚石的场效应管(Field Effect Transistor,FET)在超高频率、超大功率、高温及特殊环境领域具有极为广阔的应用前景。得益于氢终端金刚石表面的导电特性,近30年来,金刚石FET器件得到了长足的发展。首先概述了氢终端金刚石导电机理,进而回顾了氢终端金刚石FET的发展历程,随后着重讨论了增强型(常关型)器件的研究现状,并归纳阐述了几种实现增强型特性的技术路径,最后对表面终端增强型金刚石FET亟待解决的问题与发展前景进行了总结和展望。The semiconductive material diamond has excellent properties such as large bandgap width,high breakdown field,high carrier mobility,ultra-high thermal conductivity,radiation resistance,and corrosion resistance.Field effect transistors(FETs)based on diamond have extremely broad application prospects in the fields of ultra-high frequency,ultra-high power,high temperature,and special environments.Thanks to the conductive properties of hydrogen terminal diamond surfaces,diamond FETs had made significant progress in the past 30 years.The conductive mechanism of hydrogen terminal diamond is outlined,and the development history of hydrogen terminated diamond FETs are reviewed.The research status of enhanced mode(normally-off)devices is discussed in detail,and several technical paths to achieve enhanced characteristics are summarized.Finally,the urgent problems of the surface terminated enhanced diamond FETs are summarized and the development prospects are envisaged.

关 键 词：超宽禁带 金刚石 氢终端 增强型 场效应晶体管 

分 类 号：TN386[电子电信—物理电子学] TN305TN605