X波段超低功耗限幅低噪声放大器芯片的设计  

Design of X Band Ultra Low Current Limiter Low Noise Amplifier

作　　者：王测天 廖学介 刘莹 王为 羊洪轮 童伟 WANG Cetian;LIAO Xuejie;LIU Ying;WANG Wei;YANG Honglun;TONG Wei(Chengdu Jianahaiwei Technology Co.,Ltd.,Sichuan 610041,China;School of Microelectronics,Northwestern Polytechnical University,Shaanxi 710072,China)

机构地区：[1]成都嘉纳海威科技有限责任公司,四川610041 [2]西北工业大学微电子学院,陕西710072

出　　处：《电子技术（上海）》2024年第8期56-58,共3页Electronic Technology

摘　　要：阐述基于GaAs工艺开发一款9~10.2GHz限幅低噪声放大器单片微波集成芯片(MMIC)。该芯片限幅器基于I-Layer 1μm厚度的PIN二极管工艺,低噪声放大器基于增强型E-pHMET工艺,并将先限幅器和低噪声放大器集成在同一衬底,实现一片式开发。该MMIC中限幅器采用两级反向并联二极管结构,优化插损和功率特性。低噪声放大器采用三级电流复用结构和负反馈匹配,在较宽的频段内获取高增益、低噪声和超低功耗等指标。This paper describes a 9~10.2GHz limiter low noise amplifier monolithic microwave integrated chip(MMIC)based on GaAs process.The chip limiter is based on the I-Layer 1um thick PIN diode process,and the low noise amplifier is based on the enhanced E-pHMET process,and the first limiter and low noise amplifier are integrated on the same substrate to achieve one-chip development.The limiter in the MMIC adopts a two-stage reverse parallel diode structure to optimize insertion loss and power characteristics.Low noise amplifier adopts three-stage current multiplexing structure and negative feedback matching to obtain high gain,low noise and ultra-low power consumption in a wide frequency band.

关 键 词：电路设计 GaAsE-pHEMT PIN 限幅低噪放 MMIC 超低功耗 

分 类 号：TP393.08[自动化与计算机技术—计算机应用技术] TP311.13[自动化与计算机技术—计算机科学与技术]