异面结构雪崩GaAs光导开关的制备及特性测试  

Fabrication of avalanche GaAs photoconductive switch with opposedelectrode structure and its switching characteristics

作　　者：杨迎香 杨向红 朱章杰 黄嘉 李昕[1] 胡龙 Yang Yingxiang;Yang Xianghong;Zhu Zhangjie;Huang Jia;Li Xin;Hu Long(School of Microelectronics,Xi’an Jiaotong University,Xi’an 710049,China;School of Electronic and Information Engineering,Xi’an Jiaotong University,Xi’an 710049,China)

机构地区：[1]西安交通大学微电子学院,西安710049 [2]西安交通大学电子信息工程学院,西安710049

出　　处：《强激光与粒子束》2024年第11期37-41,共5页High Power Laser and Particle Beams

基　　金：国家自然科学基金面上项目(52177156);脉冲功率激光技术国家重点实验室开放基金项目(SKL2021KF05)。

摘　　要：雪崩砷化镓光导开关(PCSS)因其超快开关速度、低触发抖动、光电隔离、高功率容量、高重复频率以及器件结构灵活的特点,得到广泛应用。制备封装了电极间隙为5 mm的异面结构GaAs光导开关,对不同偏置电场下(36~76 kV/cm)开关的暗态和开态的电学特性进行了测试分析,结果表明其具有百皮秒~纳秒量级的上升沿、低暗态泄漏电流(0.15~6.61μA)、高耐压(18~38 kV)的特点。实验探究了开关工作次数与输出电压峰值的关系,结果表明随着工作次数的增大,输出电压幅值呈台阶型降低趋势,在20 kV、2 Hz条件下,开关寿命达4.0×10^(4)次。Avalanche gallium arsenide photoconductive semiconductor switches(GaAs PCSSs)have a wide range of applications due to their ultra-fast switching speed,low triggering jitter,optoelectronic isolation,high power capacity,high repetition frequency,and flexible device structure.In this paper,GaAs PCSSs with an anisotropic structure and an electrode gap of 5 mm are fabricated and packaged.The electrical characteristics of the switch in dark-state and on-states under different bias electric fields(36−76 kV/cm)are analyzed,featuring a rising edge in the order of hundred picosecond to nanosecond,low dark-state leakage current(0.15−6.61μA)and high withstand voltage(18−38 kV).The relationship between the number of switching operations and the peak output voltage is explored.The experimental results show that the output voltage amplitude tends to decrease in a stepwise manner with the increase of the number of operations.The switch lifetime reaches 4.0×10^(4) times at 20 kV and 2 Hz.

关 键 词：砷化镓 光导开关 暗态泄漏电流 输出特性 寿命 

分 类 号：TN36[电子电信—物理电子学]