Demonstration of irradiation-resistant 4H-SiC based photoelectrochemical water splitting  

作　　者：Yan Pei Wenhao Geng Lingbo Xu Can Cui Xiaodong Pi Deren Yang Rong Wang 

机构地区：[1]Zhejiang Key Laboratory of Quantum State Control and Optical Field Manipulation,Department of Physics,Zhejiang Sci-Tech University,Hangzhou 310018,China [2]State Key Laboratory of Silicon and Advanced Semiconductor Materials&School of Materials Science and Engineering,Zhejiang University,Hangzhou 310027,China [3]Institute of Advanced Semiconductors&Zhejiang Provincial Key Laboratory of Power Semiconductor Materials and Devices,HangzhouIn no-vation Center,Zhejiang University,Hangzhou 311200,China

出　　处：《Journal of Semiconductors》2024年第11期74-80,共7页半导体学报（英文版）

基　　金：supported by National Natural Science Foundation of China(Grant Nos.62274143 and U22A2075);Hangzhou Joint Funds of the Zhejiang Provincial Natural Science Foundation of China(Grant No.LHZSD24E020001);Partial support was provided by Leading Innovative and Entrepreneur Team Introduction Program of Hangzhou(Grant No.TD2022012);Fundamental Research Funds for the Central Universities(Grant No.226-2022-00200);Natural Science Foundation of China for Innovative Research Groups(Grant No.61721005);the Open Fund of Zhejiang Provincial Key Laboratory of Wide Bandgap Semiconductors。

摘　　要：4H silicon carbide(4H-SiC)has gained a great success in high-power electronics,owing to its advantages of wide bandgap,high breakdown electric field strength,high carrier mobility,and high thermal conductivity.Considering the high carrier mobility and high stability of 4H-SiC,4H-SiC has great potential in the field of photoelectrochemical(PEC)water splitting.In this work,we demonstrate the irradiation-resistant PEC water splitting based on nanoporous 4H-SiC arrays.A new two-step anodizing approach is adopted to prepare 4H-SiC nanoporous arrays with different porosity,that is,a constant low-voltage etching followed by a pulsed high-voltage etching.The constant-voltage etching and pulsed-voltage etching are adopted to control the diameter of the nanopores and the depth of the nanoporous arrays,respectively.It is found that the nanoporous arrays with medium porosity has the highest PEC current,because of the enhanced light absorption and the optimized transportation of charge carriers along the walls of the nanoporous arrays.The performance of the PEC water splitting of the nanoporous arrays is stable after the electron irradiation with the dose of 800 and 1600 k Gy,which indicates that 4H-SiC nanoporous arrays has great potential in the PEC water splitting under harsh environments.

关 键 词：4H-SIC nanoporous arrays water splitting irradiation resistance photoanodes 

分 类 号：O469[理学—凝聚态物理]