硅基高压电容器的制作方法  

Manufacturing Method for Silicon-based High-voltage Capacitors

作　　者：杨志[1] 董春晖 王敏 王敬轩[1] 商庆杰[1] 付兴中[1] 张力江[1] YANG Zhi;DONG Chunhui;WANG Min;WANG Jingxuan;SHANG Qingjie;FU Xingzhong;ZHANG Lijiang(The 13th Research Institute of CETC,Shijiazhuang 050051,China)

机构地区：[1]中国电子科技集团公司第十三研究所,石家庄050051

出　　处：《电子工艺技术》2024年第6期19-21,共3页Electronics Process Technology

摘　　要：基于微电子机械系统(MEMS)工艺,给出一种硅基高压电容器结构及工艺制作方法。设计得到了容值为2 nF、芯片尺寸为2 mm×2 mm×0.3 mm的硅基电容器。研究了制作该结构的工艺方案,解决了工艺过程中的关键技术,并给出了工艺结果。最终,实现了硅基高压电容器结构的工艺制作和测试。测试结果表明,获得的高压电容器的容值与设计值基本一致,击穿电压可以达到280 V,验证了工艺路线的可行性。Based on micro electromechanical systems (MEMS) technology,a silicon-based high-voltage capacitor structure and manufacturing method are proposed.A silicon-based capacitor with a capacitance of 2 nF and a chip size of 2 mm x 2 mm x 0.3 mm is designed.The process plan for producing this structure is studied,the key technologies in the process are solved,and the process results are provided.Finally,the process production and testing of silicon-based high-voltage capacitor structures are achieved.The test results show that the capacitance value of the obtained high-voltage capacitor is basically consistent with the design value,and the breakdown voltage can reach 280 V,verifying the feasibility of the process route.

关 键 词：硅基电容器 微电子机械系统(MEMS) 高压 TSV技术 

分 类 号：TN605[电子电信—电路与系统]