检索规则说明:AND代表“并且”;OR代表“或者”;NOT代表“不包含”;(注意必须大写,运算符两边需空一格)
检 索 范 例 :范例一: (K=图书馆学 OR K=情报学) AND A=范并思 范例二:J=计算机应用与软件 AND (U=C++ OR U=Basic) NOT M=Visual
作 者:王敏 王莹[2] 陈凯[1] 程玉华[1] 邱根[1] Wang Min;Wang Ying;Chen Kai;Cheng Yuhua;Qiu Gen(School of Automation Engineering,University of Electronic Science and Technology of China,Chengdu 611731,China;Shenzhen Institute for Advanced Study,University of Electronic Science and Technology of China,Shenzhen 518000,China)
机构地区:[1]电子科技大学自动化工程学院,成都611731 [2]电子科技大学(深圳)高等研究院,深圳518000
出 处:《电子测量与仪器学报》2024年第8期1-14,共14页Journal of Electronic Measurement and Instrumentation
基 金:国家自然科学基金(62303090,U2230206,U2330206);博士后基金(2023M740516);四川省自然科学基金(2024NSFSC1480)项目资助。
摘 要:绝缘栅双极型晶体管广泛应用于航空航天、武器装备、现代工业、交通运输和电力系统等领域。由于其工作环境复杂,IGBT极易发生异常并导致系统故障,甚至引发重大的经济损失与人员伤亡。因此,IGBT的故障检测引起了研究人员的广泛关注和高度重视。但是,目前针对IGBT故障检测技术的系统性综述较稀缺,阻碍了实际工程人员对其深层次的了解与认知。因此,该综述从方法的角度对IGBT故障检测相关研究成果进行了系统性的回顾:首先对IGBT的基本结构、工作原理以及常见失效机制进行了概述;其次,将IGBT故障检测技术基于检测方法的差异分为三大类,并总结了各类方法的优点与不足;最后,结合当前技术发展的现状,对IGBT故障检测领域的挑战与展望进行了深层次的剖析。Insulate gate bipolar transistor(IGBT)is extensively utilized in aerospace,weapon systems,modern industry,transportation,and power systems.Due to the complex environment,IGBTs are highly susceptible anomalies,leading to system failures and significant economic losses as well as casualties.Consequently,IGBT fault detection has garnered widespread attention and significant focus from researchers.However,systematic reviews of fault detection techniques for IGBTs are scarce,hindering practical engineers'deep understanding and knowledge of this field.Therefore,this review provides a systematic overview of research achievements in IGBT fault detection from a methodological perspective.Firstly,an overview of the basic structure,operation principles,and common failure mechanisms of IGBTs is presented.Secondly,IGBT fault detection technologies are categorized into three major classes based on detection methods,with a summary of the advantages and limitations of each class.Finally,considering the current technological advancements,a deep analysis of challenges and prospects of the field of IGBT fault detection is provided.
分 类 号:TN335[电子电信—物理电子学]
正在载入数据...
正在载入数据...
正在载入数据...
正在载入数据...
正在载入数据...
正在载入数据...
正在载入数据...
正在链接到云南高校图书馆文献保障联盟下载...
云南高校图书馆联盟文献共享服务平台 版权所有©
您的IP:216.73.216.117