双脉冲测试参数设计与四开关Buck-Boost DC-DC变换器效率评估  

Design of Dual-Pulse Test Parameters and Efficiency Evaluation of a Four-Switch Buck-Boost DC-DC Converter

作　　者：吴立 陶勇 张皓 唐啸 潘炼杰 WU Li;TAO Yong;ZHANG Hao;TANG Xiao;PAN Lianjie(State Grid Pudong Power Supply Company,SMEPC,Shanghai 200120,China)

机构地区：[1]国网上海市电力公司浦东供电公司,上海200120

出　　处：《电力与能源》2024年第5期573-579,共7页Power & Energy

摘　　要：双脉冲测试作为功率半导体器件性能评估的主要手段,其试验参数的准确性直接影响着测试结果。为了更准确地获得功率半导体器件的开关特性,以第三代宽禁带半导体器件SiC-MOSFET为测试对象,详细介绍了双脉冲测试电路的工作原理,给出了双脉冲测试中脉冲宽度、脉冲间隔时间及电感电容等器件相关参数的选定方法。搭建了四开关Buck-Boost硬件试验平台,根据所介绍的双脉冲参数选择方法,对SiCMOSFET单管和双管并联两种不同工作模式进行了测试,根据所获得的开关损耗数值,估算了Buck-Boost变换器的功率损耗。通过不同输出功率下测试的转换效率,验证了双脉冲测试中参数设计的准确性。Dual-pulse testing is a primary method for evaluating the performance of power semiconductor devices,and the accuracy of the test parameters directly impacts the test results.To accurately determine the switching characteristics of power semiconductor devices,this study focuses on the third-generation wide bandgap semiconductor SiC-MOSFET.It details the working principles of the dual-pulse test circuit and provides methods for selecting test parameters,such as pulse width,pulse interval,and related inductance and capacitance values.A hardware test platform for a four-switch Buck-Boost converter was constructed,and tests were performed using the specified dual-pulse parameters for both single and parallel SiC-MOSFET configurations.The switching loss data obtained were used to estimate the power loss in the Buck-Boost converter.The accuracy of the parameter design in dual-pulse testing was validated through efficiency tested at different output power levels.

关 键 词：SiC-MOSFET 效率评估 双脉冲测试 开关特性 参数设计 

分 类 号：TM75[电气工程—电力系统及自动化]