磁控溅射氧化硅和氧化硅/氮化硅/氧化硅薄膜绝缘性能的研究  

Study of Electrical Insulation Property of Magnetron Sputtered Silicon Oxide and Silicon Oxide/Silicon Nitride/Silicon Oxide Films

作　　者：陈玉云 王晓旭 陈远明 沈奕 黄锐[3] CHEN Yu-yun;WANG Xiao-xu;CHEN Yuan-ming;SHEN Yi;HUANG Rui(Guangdong Provincial Key Laboratory of Automotive Display and Touch Technologies,Shantou Goworld Display Technology Co.,Ltd.,Shantou 515041,China;Shantou Goworld Display(Plant II)Co.,Ltd.,Shantou 515041,China;Hanshan Normal University,Chaozhou 521000,China)

机构地区：[1]汕头超声显示器技术有限公司广东省车载显示触控技术重点实验室,广东汕头515041 [2]汕头超声显示器(二厂)有限公司,广东汕头515041 [3]韩山师范学院,广东潮州521000

出　　处：《真空》2024年第6期15-20,共6页Vacuum

基　　金：2023年省科技创新战略专项市县科技创新支撑(大专项+任务清单)项目(STKJ2023053)。

摘　　要：研究了磁控溅射氧化硅(SiO_(2))单层和氧化硅/氮化硅(Si_(3)N_(4))/氧化硅(ONO叠层)的绝缘性能,对多批次、尺寸为4.5 cm×3.5 cm的SiO_(2)单层和ONO叠层进行了绝缘电阻测试。结果表明:ONO叠层的全域绝缘样品比例高于SiO_(2)单层的全域绝缘样品比例,且不同批次ONO叠层的绝缘性能更加稳定;相比于SiO_(2)单层,ONO叠层的桥氧伸缩振动信号(A峰)位置蓝移,氧空位缺陷相关信号(B峰)和非桥氧伸缩振动信号(C峰)相对于桥氧弯曲振动信号(D峰)较弱,说明ONO叠层的原子缺陷(氧空位、非桥氧等)较少,其原因为添加Si_(3)N_(4)夹层能够在化学上阻断SiO_(2)缺陷扩展;通过定量化A峰位置、D峰与B峰强度之比、D峰与C峰强度之比三个参数,获得了无损评估SiO_(2)单层和ONO叠层绝缘性能的指标。Electrical insulation property of magnetron sputtered silicon oxide(SiO_(2))and silicon oxide/silicon nitride(Si_(3)N_(4))/silicon oxide(ONO)films were investigated.The insulation resistance of three batches of SiO_(2) and ONO films of 4.5 cm×3.5 cm were tested.The results show that the ratio of fully-insulative ONO films is relatively higher and more stable.Compared with SiO_(2) single layer,the signal related to stretch motions of bridge oxygen(peak A)of ONO film is blue shifted,and the signal related to oxygen vacancies(peak B)or bending motions of non-bridge oxygen(peak C)is weaker than the signal related to bending motion of bridge oxygen(peak D).These structural features indicate that the atomic defects(such as oxygen vacancies and non-bridge oxygen)within ONO films are less than those within SiO_(2) films.Such differences are understood in terms that the addition of Si_(3)N_(4)interlayer chemically interrupts the continuous growth of defects in SiO_(2) films.By quantifying the three parameters including position of peak A,the ratio of intensity of peak D to that of peak B,the ratio of intensity of peak D to that of peak C,the electrical insulation properties of SiO_(2) and ONO films can be evaluated non-destructively.

关 键 词：磁控溅射 氧化硅 ONO叠层 绝缘性能 傅里叶红外光谱 无损探测 

分 类 号：O484.1[理学—固体物理]