聚二烯丙基二甲基氯化铵对钨和SiO_(2)去除速率选择性的影响  

Effect of Poly Dimethyl Diallyl Ammonium Chloride on Removal Rate Selectivity of Tungsten and Silicon Dioxide

作　　者：李丁杰 周建伟 罗翀 王辰伟 孙纪元 杨云点 冯鹏 LI Dingjie;ZHOU Jianwei;LUO Chong;WANG Chenwei;SUN Jiyuan;YANG Yundian;FENG Peng(School of Electronic and Information Engineering,Hebei University of Technology,Tianjin 300130,China;Tianjin Key Laboratory of Electronic Materials and Devices,Tianjin 300130,China;Semiconductor Technology Innovation Center(Beijing)Corporation,Beijing 100176,China)

机构地区：[1]河北工业大学电子信息工程学院,天津300130 [2]天津市电子材料与器件重点实验室,天津300130 [3]北方集成电路技术创新中心(北京)有限公司,北京100176

出　　处：《润滑与密封》2024年第11期102-108,共7页Lubrication Engineering

基　　金：国家自然科学基金项目(62074049)。

摘　　要：为了提高钨(W)和SiO_(2)在化学机械抛光(CMP)过程中的去除速率选择比,提出将绿色环保的聚二烯丙基二甲基氯化铵(PDADMAC)作为SiO_(2)去除速率的抑制剂;以普通硅溶胶为磨料,研究酸性抛光液中不同PDADMAC添加量对W和SiO_(2)去除速率以及表面粗糙度的影响,并探究PDADMAC在CMP过程中对W和SiO_(2)的不同作用机制。结果表明:随着PDADMAC添加量的增加,W的去除速率小幅度下降,SiO_(2)的去除速率大幅度下降,从而提高了W和SiO_(2)之间的去除速率选择比;PDADMAC会在W表面发生静电吸引作用和在SiO_(2)表面发生吸附作用,这些作用会明显增加W和SiO_(2)的去除速率选择比和改善W和SiO_(2)镀膜片的表面质量;以PDADMAC为抑制剂,使用普通硅溶胶为磨料即可实现较高的W去除速率和较高的W和SiO_(2)去除速率选择比。In order to improve the removal rate selectivity of tungsten and SiO_(2)in the chemical mechanical polishing(CMP)process,green reagent poly dimethyl diallyl ammonium chloride(PDADMAC)was proposed as the SiO_(2)inhibitor in the tungsten CMP slurry.The effect of different PDADMAC content on the removal rate of tungsten and SiO_(2)in the acidic polishing solution was studied using ordinary silica sol as abrasive.The different mechanisms of PDADMAC on tungsten and SiO_(2)during CMP was explored.The results show that with the increase of PDADMAC content,the removal rate of tungsten decreases slightly,and the removal rate of SiO_(2)decreases significantly,so the selection ratio of removal rate between tungsten and SiO_(2)is improved.PDADMAC has electrostatic attraction on tungsten surface and adsorption on SiO_(2)surface,and these effects will significantly increase the W and SiO_(2)removal rate selectivity and improve the surface quality of W and SiO_(2)wafer.The ordinary silica sol as abrasive can achieve higher tungsten removal rate and higher removal rate selectivity of tungsten and SiO_(2)when using PDADMAC as inhibitor.

关 键 词：化学机械抛光 去除速率选择性 表面粗糙度 聚二烯丙基二甲基氯化铵 

分 类 号：TH117.1[机械工程—机械设计及理论] TG175[金属学及工艺—金属表面处理]