碳纳米管太赫兹肖特基二极管研究进展  

Research progress of carbon nanotube terahertz Schottky diodes

作　　者：李海鸥[1] 刘洪刚[2] 吴俊宏 LI Haiou;LIU Honggang;WU Junhong(School of Information and Communication,Guilin University of Electronic Technology,Guilin 541004,China;Center for Carbon-based Electronics,Peking University,Beijing 100871,China)

机构地区：[1]桂林电子科技大学信息与通信学院,广西桂林541004 [2]北京大学碳基电子学研究中心,北京100871

出　　处：《桂林电子科技大学学报》2024年第4期331-339,共9页Journal of Guilin University of Electronic Technology

基　　金：云南省科技重大专项计划新材料专项(202102AB080008-2);国家自然科学基金(62174041);广西自然科学基金(2018GXNSFGA281004)。

摘　　要：肖特基二极管是太赫兹领域的核心器件之一,在太赫兹倍频、混频电路中有着广泛的应用,碳纳米管凭借其优良的电学性质、准一维尺寸以及稳定的结构成为了太赫兹肖特基二极管的理想沟道半导体材料,研究碳纳米管肖特基二极管对于太赫兹技术的发展至关重要。首先介绍了碳纳米管的本征材料优势及其材料制备技术;接着对国内外在碳纳米管肖特基二极管方面的研究成果和进程进行了介绍,阐述了碳纳米管肖特基二极管在太赫兹技术领域的应用潜力;最后总结了碳纳米管太赫兹肖特基二极管在研究过程中所面临的关键技术问题和未来发展方向。Schottky diodes are considered as core devices in the terahertz field with diverse applications in terahertz frequency dou-bling and mixing circuits.Carbon nanotubes have emerged as an ideal channel semiconductor material for terahertz Schottky diodes due to their excellent electrical properties,one-dimensional dimensionality,and stable structure.The development of carbon nan-otube Schottky diodes is crucial for the advancement of terahertz technology.This paper commences with an introduction of the in-trinsic advantages and material preparation techniques of carbon nanotubes.Furthermore,it discusses the research progress and achievements of carbon nanotube Schottky diodes both domestically and internationally,thereby demonstrating the potential of car-bon nanotube Schottky diodes in the terahertz technology field.Finally,the manuscript summarizes the challenges and issues faced in the research process of carbon nanotube terahertz Schottky diodes and provides a prospective outlook on the development direc-tion of carbon-based terahertz technology.

关 键 词：肖特基二极管 碳纳米管 太赫兹 串联电阻 截止频率 

分 类 号：TN315[电子电信—物理电子学]