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作 者:葛梦然 赵桂丽 郑金涛 赵玉康 邢旭 葛培琪[2] Ge Mengran;Zhao Guili;Zheng Jintao;Zhao Yukang;Xing Xu;Ge Peiqi(School of Mechanical and Electronic Engineering,Shandong Jianzhu University,Ji’nan 250101,China;School of Mechanical Engineering,Shandong University,Ji’nan 250061,China;Qingdao Gaoce Technology Co.,Ltd.,Qingdao 266114,China)
机构地区:[1]山东建筑大学机电工程学院,济南250101 [2]山东大学机械工程学院,济南250061 [3]青岛高测科技股份有限公司,青岛266114
出 处:《太阳能学报》2024年第11期183-193,共11页Acta Energiae Solaris Sinica
基 金:国家自然科学基金(52005301,52175418);山东省重点研发计划(2022CXGC010201);山东省高校青创团队计划(2022KJ208)。
摘 要:分析光伏单晶硅切片加工的原理和现状,金刚石线锯母线直径已降低至37μm,G12半片光伏单晶硅片的切片厚度已减小到110μm。阐述光伏硅晶体高出片率切片加工的主要技术途径是锯切硅片厚度减薄和金刚石线锯直径减小。分别讨论锯切硅片表面裂纹损伤和断裂强度、金刚石线锯间和硅片间的液桥作用以及机器视觉检测对光伏单晶硅高出片率切片加工的影响。对光伏单晶硅高出片率切片加工面临的关键技术提出展望:1)开发低成本钨丝金刚石线锯;2)研发新型冷却润滑液和冷却润滑技术;3)研发切片加工新工艺;4)建立电镀金刚石线锯表面磨粒分布状态与切片加工性能之间的量化关系。The principle and state-of-art of PV monocrystalline silicon slicing processing are reviewed herein.The core wire diameter of the diamond wire saw has been reduced to 37μm.The as-cut half G12 wafer thickness of PV monocrystalline silicon has been reduced to 110μm.It is elaborated that the main technical approaches for high wafer yield slicing are to reduce the as-cut wafer thickness and the diameter of diamond wire saw.The effects of surface crack damage and fracture strength of sliced silicon wafer,liquid bridge interaction at diamond wire saws and as-cut silicon wafers,and machine vision detection on the high wafer yield slicing processing of PV monocrystalline silicon are discussed.The key technologies faced in the high wafer yield slicing processing of PV monocrystalline silicon are proposed:1)to develop low-cost tungsten core wire diamond wire saw;2)to develop new coolants and lubricating technologies;3)to develop new slicing processing technology;4)to establish a quantitative relationship between the distribution of abrasives and the machining performance of electroplated diamond wire saw.
关 键 词:光伏 锯切 单晶硅 金刚石线锯 切片厚度 锯缝损耗
分 类 号:TK511[动力工程及工程热物理—热能工程]
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