Relation of V/III ratio of AlN interlayer with the polarity of nitride  

作　　者：Zhaole Su Yangfeng Li Xiaotao Hu Yimeng Song Zhen Deng Ziguang Ma Chunhua Du Wenxin Wang Haiqiang Jia Yang Jiang Hong Chen 苏兆乐;李阳锋;胡小涛;宋祎萌;邓震;马紫光;杜春花;王文新;贾海强;江洋;陈弘(Key Laboratory for Renewable Energy,Beijing Key Laboratory for New Energy Materials and Devices,Beijing National Laboratory for Condensed Matter Physics,Institute of Physics,Chinese Academy of Sciences,Beijing 100190,China;University of Chinese Academy of Sciences,Beijing 100049,China;Songshan Lake Materials Laboratory,Dongguan 523808,China;School of Mathematics and Physics,Beijing Key Laboratory for Magneto-Photoelectrical Composite and Interface Science,University of Science and Technology Beijing,Beijing 100083,China;The Yangtze River Delta Physics Research Center,Liyang 213000,China)

机构地区：[1]Key Laboratory for Renewable Energy,Beijing Key Laboratory for New Energy Materials and Devices,Beijing National Laboratory for Condensed Matter Physics,Institute of Physics,Chinese Academy of Sciences,Beijing 100190,China [2]University of Chinese Academy of Sciences,Beijing 100049,China [3]Songshan Lake Materials Laboratory,Dongguan 523808,China [4]School of Mathematics and Physics,Beijing Key Laboratory for Magneto-Photoelectrical Composite and Interface Science,University of Science and Technology Beijing,Beijing 100083,China [5]The Yangtze River Delta Physics Research Center,Liyang 213000,China

出　　处：《Chinese Physics B》2024年第11期417-421,共5页中国物理B（英文版）

基　　金：Project supported by the National Natural Science Foundation of China(Grant No.62004218);the Strategic Priority Research Program of Chinese Academy of Sciences(Grant No.XDB33000000).

摘　　要：N-polar GaN film was obtained by using a high-temperature AlN buffer layer.It was found that the polarity could be inverted by a thin low-temperature AlN interlayer with the same V/III ratio as that of the high-temperature AlN layer.Continuing to increase the V/III ratio of the low-temperature AlN interlayer,the Ga-polarity of GaN film was inverted to N-polarity again but the crystal quality and surface roughness of GaN film greatly deteriorated.Finally,we analyzed the chemical environment of the AlN layer by x-ray photoelectron spectroscopy(XPS),which provides a new direction for the control of GaN polarity.

关 键 词：SEMICONDUCTORS III-V semiconductors chemistry of MOCVD and other vapor deposition methods 

分 类 号：O469[理学—凝聚态物理]