Spatial electron-spin splitting in single-layered semiconductor microstructure modulated by Dresselhaus spin-orbit coupling  

作　　者：Jia-Li Chen Sai-Yan Chen Li Wen Xue-Li Cao Mao-Wang Lu 陈嘉丽;陈赛艳;温丽;曹雪丽;卢卯旺(College of Physics and Electronic Information Engineering,Guilin University of Technology,Guilin 541004,China)

机构地区：[1]College of Physics and Electronic Information Engineering,Guilin University of Technology,Guilin 541004,China

出　　处：《Chinese Physics B》2024年第11期457-461,共5页中国物理B（英文版）

基　　金：Project supported by the National Natural Science Foundation of China(Grant No.62164005).

摘　　要：Combining theory and computation,we explore the Goos–H¨anchen(GH)effect for electrons in a single-layered semiconductor microstructure(SLSM)modulated by Dresselhaus spin–orbit coupling(SOC).GH displacement depends on electron spins thanks to Dresselhaus SOC,therefore electron spins can be separated from the space domain and spinpolarized electrons in semiconductors can be realized.Both the magnitude and sign of the spin polarization ratio change with the electron energy,in-plane wave vector,strain engineering and semiconductor layer thickness.The spin polarization ratio approaches a maximum at resonance;however,no electron-spin polarization occurs in the SLSM for a zero in-plane wave vector.More importantly,the spin polarization ratio can be manipulated by strain engineering or semiconductor layer thickness,giving rise to a controllable spatial electron-spin splitter in the field of semiconductor spintronics.

关 键 词：semiconductor spintronics single-layered semiconductor microstructure(SLSM) spin-orbit coupling(SOC) Goos-Hänchen(GH)effect electron-spin polarization 

分 类 号：O471[理学—半导体物理]